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Diagnostic Methods
Published in Ranjeet Kumar Sahu, Somashekhar S. Hiremath, Corona Discharge Micromachining for the Synthesis of Nanoparticles, 2019
Ranjeet Kumar Sahu, Somashekhar S. Hiremath
In ionic spectrometry, high energy beams (order of MeV) of light ions enter into the target sample to a depth of hundreds of nanometers and collide elastically with the atoms of the sample. Thus, the incident ions lose their energies through electronic excitation and ionization of target atoms. Due to the Coulomb repulsion between ions and target atoms, the incident ions are backscattered, which is known as Rutherford backscattering. The energy of backscattered incident ions (E1) is given by: E1=(M2−M02sin2θ+M0cosθM0+M)×2E0
Nobel Ag–Cu ion-exchange bimetallic nanoclusters formation over gold ion (Au2+) implanted materials RBS and optical study
Published in Radiation Effects and Defects in Solids, 2021
A. C. Ferdinand, D. Manikandan, P. Manikandan, G. Kavitha, R. Gaur, M. Maaza, E. Manikandan
Rutherford backscattering spectrometry (RBS) is an analytical technique used in materials science. RBS is used to determine the structure and composition of materials by measuring the backscattering of a beam of high energy ions impinging on a metal. A method of determining the concentrations of various elements as a function of depth under the surface of a sample, by measuring the energy spectrum of ions which are backscattered emitted energy beam directed at the surface. Rutherford backscattering as an elastic collision between a high kinetic energy particle from the incident beam (the projectile) and a stationary particle located in the sample. Elastic in this context means that no energy is either lost or gained during the collision. Optical absorption spectra of the Cu and Ag samples implanted with Au2+ ions are shown in Figures 4 and 5, respectively.
Design of an automated particle detection system for Rutherford backscattering (RBS) using LabVIEW
Published in Instrumentation Science & Technology, 2018
Kyuhak Oh, Michael P. Christenson
Rutherford backscattering RBS is a widely used technique as a general diagnostic and analytic tool for material analysis, such as structure and composition, based on the backscattering of impinging high-energy ions – usually alpha particles and protons – from a sample material.[1,2] Because it is completely quantitative, nondestructive, and sensitive to all of the elements in the periodic table, it provides a wealth of information about the surface properties.[3] RBS analyses are therefore useful in determining thin film compositions, thicknesses, and densities, as well as the areal concentrations in a film. Since the development of RBS, it has been applied to many fields related to material analysis, such as those which investigate semiconductors, superconductors, thin surface structures, metal and crystal orientations, metal and crystal damage, and polymers.[4] Specifically, the semiconductor industry has used RBS for the quantitative depth analysis of metallic films, metal barriers, insulating film layers, multilayer stacks, and crystal damage versus depth.
Determination of the Oxygen Concentration in GDP Thin Films Using Rutherford Backscattering Spectroscopy
Published in Fusion Science and Technology, 2021
Xiaojun Ma, Qi Wang, Zongwei Wang, Xiangyu Wan
Rutherford backscattering spectroscopy (RBS) has been widely used in the elemental composition analysis of various materials.9,10 The RBS technique requires no external calibration, and the elemental composition in micrometer-sized areas can be determined using a focused ion beam. Furthermore, the concentration and the distribution of carbon, hydrogen, and oxygen elements can be determined simultaneously in a measurement. Therefore, RBS is a potential technique applied to measure quantitatively the elemental composition in an individual capsule.