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III-Nitride Nanowires and Their Laser, LED, and Photovoltaic Applications
Published in Fumitaro Ishikawa, Irina A. Buyanova, Novel Compound Semiconductor Nanowires, 2017
Wei Guo, Pallab Bhattacharya, Junseok Heo
The III-nitride nanowire array has been successfully grown on Si substrates, and the nanowires exhibit favorable material properties for various device applications as well as a defect-free material platform to study the fundamental physics in nitride materials and devices. Nanowire LEDs have largely demonstrated promising results to revolutionize the solid-state lighting industry. Due to unique nanoscale, nanowire materials have been utilized in nanoscale laser applications, where single GaN nanowire lasers have been demonstrated. Finally, III-nitride nanowires have also been employed for photovoltaic applications, and the early demonstration of nanowire PV devices has shown unique properties and performance.
Nanowire Transistors: A Next Step for the Low-Power Digital Technology
Published in IETE Journal of Research, 2021
D. Ajitha, K. N. V. S. Vijaya Lakshmi, K. Bhagya Lakshmi
The small sizes of the optoelectronic devices are very useful in the photonic technologies. The better solution for laser with small foot prints and low-power consumption is nanowire semiconductors [62]. Nanowire also incurs some amount of losses to prevent the shorter wires from lasing. For this, GaN ring resonators are used to get efficient lasing cavities. The power required for nanowire lasers is smaller than that of the macroscopic lasers. Multi-quantum well (MQW) nanowire heterostructures, which consist of a GaN NW core that serves as the principal component of the optical cavity and epitaxial InGaN/ GaN MQW shells that serve as the composition variable gain medium, can also be used to make multi-colour nanowire lasers. Optical excitation of individual MQW NW structures yielded lasing with emission engineered from 365 to 494 nm through the modulation of quantum well composition. The light emission from the nanowire laser is shown in Figure 7 [63]. A halide chemical vapour deposition approach was used to construct heteroexpitaxial In x Ga 1-x N nanowire arrays on c-plane sapphire. The broadband tuneable direct band gap of these InGaN nanowires was established using photoluminescence measurements. As illustrated in Figure 8, nano-LEDs produced from nanowires epitaxially on developed p-GaN substrates exhibited electroluminescence varying from blue to orange, corresponding to Indium compositions ranging from 6% to 43%. The nano-LED is fabricated [64] using nanowires as p-GaN substrate exhibits luminescence ranging from blue to orange. The nano-LED emission is shown in Figure 8 [65].