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0 Ferromagnetism for Spintronics Application
Published in Ram K. Gupta, Sanjay R. Mishra, Tuan Anh Nguyen, Fundamentals of Low Dimensional Magnets, 2023
Ravi Trivedi, Brahmananda Chakroborty
In a magnetic semiconductor, electrical and optical properties might be unpredictably interlinked. Ferromagnetism is clarified by the idea that a few types of particles have a magnetic second. Customarily there have been two ways to deal with attraction in solids, one dependent on nearby minutes, the other on electrons delocalized in tight energy groups. The principal approach is substantial for ionic protecting mixtures, where the magnetic minutes are borne by cations with to some extent filled d or f shells. The quantity of electrons per particle is typically a number, and the cation has a conventional charge state identified with its electron count. In the subsequent methodology, the second approach is conveyed all through the strong in spin split energy groups. For the most part, the Fermi level meets both ↑ and ↓ groups, and the indispensable twist second rule is out of commission. Attraction is a grounded marvel which emerges because of the trade association between the electrons into some degree filled d or f orbital’s display this marvel [16–18]. Aside from this, magnetic conduct of specific materials with totally filled or zero-filled d or f orbital’s is likewise noticed and has stayed under banter among specialists during the last decade [19–25]. The magnetism which emerges due to filled or unfilled d or f orbital’s is known as d0 ferromagnetism, and it is a wide field of study for established researchers according to a phenomenological perspective [19–23].
Technical and analytical note on t he performance maximization of spin lasers by optimizing the spin polarization
Published in Gin Jose, Mário Ferreira, Advances in Optoelectronic Technology and Industry Development, 2019
Ritu Walia, Kamal Nain Chopra*
Spin polarization of electrons is also produced by the application of a magnetic field. It is to be noted that the Curie law is used to produce an induction signal in Electron spin resonance (ESR). Spin polarization plays an important role in spintronics, a branch of electronics, and a lot of research work is going on the magnetic semiconductors as possible spintronic materials. (Ga,Mn)As at low temperatures is a commonly used material. Spin polarization of holes P in (Ga,Mn)As at low temperatures has been measured by the Andreev reflection on Ga/Ga0.95Mn0.05As junctions as high as ~80%. Similar effective P value of 77% has been reported from the magnitude of Tunneling Magneto Resistance (TMR) = 290% at low temperatures. It is interesting to note that these results agree well with the theoretical calculations of (Ga,Mn)As. Spin-polarization can also be usefully achieved by short laser pulses ― two-electron system.
Electrical Spin Injection and Transport in Semiconductors
Published in Evgeny Y. Tsymbal, Igor Žutić, Spintronics Handbook: Spin Transport and Magnetism, Second Edition, 2019
Magnetic semiconductors simultaneously exhibit semiconducting properties and typically either paramagnetic or FM order. The coexistence of these properties in a single material provides fertile ground for fundamental studies, and offers exciting possibilities for a broad range of applications. The use of a magnetic semiconductor as a spin contact enables the design of a spin-injecting semiconductor/semiconductor interface guided by known principles of bandgap engineering (CB and VB offsets, doping, and carrier transport) and epitaxial growth (lattice match, interface structure, and materials compatibility). Therefore, they seem ideal candidates for incorporation in semiconductor spintronic devices. However, their magnetic properties to date fall well short of those required for practical devices—e.g. the Curie temperature is typically well below room temperature, despite much effort to increase it.
Structural, optical, and magnetic properties of pristine and Cr doped WO3 nanoparticles
Published in Inorganic and Nano-Metal Chemistry, 2022
A. Jerold Antony, S. Mary Jelastin Kala, C. Joel, R. Biju Bennie, S. Vivetha
Dilute magnetic semiconductors (DMSs) have recently attracted the interest of the researchers to a great extent in recent times accounting for their exceptional magnetic properties and versatile applications in the field of spintronic devices.[1,2] Hence, a wide variety of semiconductor devices, such as lasers, spin-polarized light-emitting diodes and spin-transistor logic devices can be designed. The main idea of spintronics is to use both the charge and spin of electrons at the same time in order to enhance the performance of microelectronic devices of nanometer size. This type of devices requires materials with ferromagnetic ordering at operational temperatures compatible with the existing semiconductor materials. This device concept will be well suited by DMSs.[3]
The inhibitory role of synthesized Nickel oxide nanoparticles against Hep-G2, MCF-7, and HT-29 cell lines: the inhibitory role of NiO NPs against Hep-G2, MCF-7, and HT-29 cell lines
Published in Green Chemistry Letters and Reviews, 2021
Mohammad Amin Jadidi Kouhbanani, Yasin Sadeghipour, Mina Sarani, Erfan Sefidgar, Saba Ilkhani, Ali Mohammad Amani, Nasrin Beheshtkhoo
Nickel 0xide nanoparticles (NiO NPs), among metal oxides, are P-type semiconductors possessing an extensive band gap in the range of 3.6 eV to 4.0 eV (16). Nanocrystalline NiO has fantastic magnetic features which are relevant to size and surface impacts (17,18). Because of the anticipated and amazing features for their broad usage in various disciplines like high density recording media, spin valves, magnetic resonance imaging, ferrofluid technology, and magnetocaloric refrigeration, nanomaterials have turned into an interesting subject in nanoscience (19,20). One of the novel semiconductors is diluted magnetic semiconductor (DMS) that is prepared by utilizing magnetic transition metal ions or scarce earth metal ions to accidently substitute the non-magnetic cations in semiconductors and to cause the semiconductor to show magnetic features (21). Semiconductors like it can be possibly applied in spin monitored tools. Overall, NiO NPs are possessing particular structures and properties that are used in photovoltaic fields, catalysts, sensors, ceramics, gas sensors, and optical filters (22–24). The increasing use of NiO NPs needs a better understanding of their potential impact on the environment and human health. Therefore, the toxic effects of NiO NPs were investigated in different human cell lines, namely lung, breast, and colon cancer cells.
Experimental and theoretical assessment of Fe-doped indium-oxide-based dilute magnetic semiconductors
Published in Philosophical Magazine, 2019
Rana Mukherji, Vishal Mathur, Arvind Samariya, Manishita Mukherji
Dilute magnetic semiconductors (DMS) are promising materials for spintronics applications. The advantages of oxide DMSs are their large band gaps, high carrier concentrations, ease of fabrication and high Curie temperatures (Tc). An oxygen deficiency is considered as an important reason for the room-temperature ferromagnetism (RTFM) in these semiconductors [1–5]. The high electronegativity of oxygen particles can produce a strong p-d exchange between localised spins and carriers. As a result, oxide semiconductors exhibit ferromagnetism both at and above room temperature. Additionally, these semiconductors have high solvency of impurity ions. Various experimental and theoretical investigations have been undertaken on the magnetic properties of transition metal (TM)-doped TiO2, ZnO, SnO2, In2O3, Cu2O, etc [6–15].