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Published in Zbigniew Galazka, Transparent Semiconducting Oxides, 2020
Cuprite Cu20 is one of the first oxides where semiconducting properties could be observed, and it belongs to the small group of p-type TSOs [24]. Moreover, copper(I) oxide is an important component of some delafossites such as CuA1O2, which are also p-type semiconductors. Copper belongs to the first subgroup of the periodic system (Cu-Ag-Au), and all these metals are comparably noble (increasingly in this order, see Table 2.1). Accordingly, Cu20 loses its oxygen easily, and already heating in a virtually “oxygen-free” atmosphere such as technical Ar or N2 is sufficient to convert it to metallic copper. This can be dangerous if metallic crucibles such as Pt are used, because Cu can alloy and consequently destroy the crucible (see Section 2.4).
Copper and copper alloys
Published in R. F. Tylecote, The Prehistory of Metallurgy in the British Isles, 2017
In pure air the stable form of copper is the oxide tenorite (CuO). More acid conditions can produce malachite. If corrosion is not complete and some copper metal is left, then the red cuprous oxide (cuprite – Cu2O) is normally present. A sulphurous urban atmosphere will produce brochantite (CuS04.3Cu(OH)2), but this hardly ever forms in soils.
Recent progress in the development of backplane thin film transistors for information displays
Published in Journal of Information Display, 2023
Gwon Byeon, Seong Cheol Jang, Taewan Roh, Ji-Min Park, Hyun-Suk Kim, Yong-Young Noh
Copper oxide has two common forms: cuprous oxide or cuprite (Cu2O) and cupric oxide or tenorite (CuO). Both copper oxides are generally p-type semiconductors, and Cu2O shows higher mobility than CuO. By doping Ga, which presents high-oxygen affinity, the Cu2O film decreases oxygen vacancy (Vo) during the reduction [27]. By reduction, Cu2O TFT improved overall TFT performance, such as field effect mobility, on/off ratio, threshold voltage, and subthreshold swing. Also, there are some reports about copper oxide TFT fabricated by ALD. Wanjoo et al. examine the CuOx TFT fabricated by the ALD process with the precursor of hexafluoroacetylacetonate Cu(I)(3,3-dimethyl-1-butene)[(hfac)Cu(I)(DMB)] and reactant of ozone gas (O3) [28]. The XPS results indicate that the Cu2+ bonding state increases during the annealing temperature of 300 °C, which means the formation of Cu2O. Here, the mobility of CuOx TFT results in 5.64 cm2/Vs.
Synthesis and photocatalytic properties of flexible Cu2O thin film
Published in Surface Engineering, 2020
Biao Wang, Yu Xie, Tianpeng Yang, Lina Wang, Longcheng Wang, Dalai Jin
Cuprite Cu2O with cubic lattice structure has the O–Cu–O 180-degree linear co-ordination, which produces three typical crystallographic planes, (100), (110), and (111) [18]. It is known that the PEC performance of Cu2O thin film is strongly related to the morphology and structure. Cu2O with (111) preferred orientation leads to better PEC performance than (200) orientation according to Nian’s report [19]. This might be attributed to that the exposed (111) plane has a larger Cu atom arrangement density. As a result, the exposed surface Cu atoms can adsorb more ions from the measuring electrolyte solution, leading to more surface state density and more positive flat band potential. Here, the orientation and the shape control of Cu2O grains are much more outstanding as deposition on CNW substrate with stretchable mechanical property makes it possible to design a flexible Cu2O thin film.
Cu2O thin films prepared by chemical bath deposition: An improved method
Published in Phase Transitions, 2022
Emine Güneri, Dilek Aker, Johnson Henry, Canan Alper Billur, Buket Saatçi
Cuprite or cuprous oxide (Cu2O) is a p-type semiconductor that has gained much importance in recent years due to its unique features such as non-toxic, availability, high absorption coefficient, high mobility, high carrier diffusion length, etc. [1–4]. The bandgap of Cu2O was founded to be in the range of 1.9–2.6 eV [5]. Cu2O found application in many electrical and optical devices such as lithium batteries [6], gas sensors [7], and solar cells [8]. This application requires a material of high efficiency, high stability, and a high absorbance in the visible wavelength region [9]. Improving the properties of Cu2O thin films is essential to improve the performance of the above-mentioned devices. According to the literature, there are many different methods used to obtain Cu2O thin films like e-beam evaporator [10], reactive RF magnetron sputtering [11], spray pyrolysis deposition [12], molecular beam epitaxy [13], electrodeposition [14], thermal evaporation [15], and chemical bath deposition method (CBD) [16]. In this study, CBD was employed due to its numerous advantages like low cost, cheap materials, low temperature, and films that can be obtained in a larger area [16]. CBD was also used to obtain Cu2O thin films by the other researchers. Aref et al. [17] prepared Cu2O thin films on a different substrate (fluorine-doped SnO2, Cu, and Ti) and investigated the effects of substrate on the optical and electrochemical properties. Xu et al. [18] focused on reaction conditions of Cu2O film and used cheap bargain glucose as reduction. In another study of theirs, they investigated the effect of trisodium citrate volume on orientation and crystallite size of thin films [19]. Dong et al. [20] obtained [200] oriented Cu2O thin films and evaluated the photocatalytic activities of the thin films. Xiong et al. [21] investigated the effects of immersion cycles on the grain shape of Cu2O films. The properties of the film were investigated from point of the view effect of complexing agent and deposition time [22]. In this work, the structural, morphological, and optical properties of Cu2O thin films were investigated in terms of Cu nanoparticle’s weight in the solution, this process is not tried by other researchers. In these respects, our work can improve the literature.