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Flat Panel Display
Published in Chung-Shing Lee, Michael Pecht, The Taiwan Electronics Industry, 2020
Chung-Shing Lee, Michael Pecht
The global FPD industry uses a diverse set of technologies to satisfy a broad array of applications. The dominant technology is the LCD, which itself comes in many forms; the primary variations are the more advanced active matrix LCD (AMLCD) and the basic passive matrix LCD (PMLCD). Measured by value of sales, LCDs account for approximately 87 percent of the worldwide FPD market in 1995 (US$ 10 billion), evenly divided between active and passive matrix types. The FPD market as a whole is projected to double between 1995 and 2001, and AMLCDs are expected to account for 54 percent of total FPD market [Office of Technology Assessment, 1995]. In addition to LCDs, smaller shares are accounted for by another two type of FPD: plasma displays and electroluminescent (EL) displays. In terms of value, these four FPD types make up the vast majority of the FPDs currently in use.
Device characterization
Published in Sharma Gaurav, Digital Color Imaging Handbook, 2017
The type of LCD most commonly used for computer display is the back-lit active-matrix LCD (AMLCD) employing twisted nematic technology. In this technology, each pixel comprises a pair of linear polarizers and a liquid crystal substrate sandwiched between them. The polarizations are oriented orthogonally to each other. Light from a source behind the display surface passes through the first polarizer and is then reoriented by the liquid crystal substrate before it is passed through the second polarizer. The light then passes through one of red, green, or blue filters, arranged in a spatial mosaic. The extent of optical reorientation by the liquid crystal, and thus the intensity of light finally emanated, is determined by an electric field applied to the liquid crystal substrate. This field is determined by an applied voltage, which in turn is driven by the digital input to the device.
Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2
Published in Journal of Information Display, 2018
Takashi Noguchi, Tatsuya Okada
Low-temperature poly-Si (LTPS) thin-film transistors (TFTs) [1-3] have been extensively studied for application in the active-matrix liquid crystal display (AM LCD) and the active-matrix organic light-emitting diode (AM OLED) display on glass even on flexible panels [4, 5]. The LTPS TFT fabrication process makes it possible to integrate peripheral driving circuits on an identical panel. Flexible or bendable use is currently desired for the next-generation smart display panel, which mounts high-performance TFTs on polymer plastic sheets. For the fabrication of poly-Si TFTs on plastic, a fairly low-temperature (below 500°C) fabrication process is required. Although a transfer process onto a polymer plastic sheet after the fabrication of TFTs on a glass substrate has been proposed and developed, the fabrication cost for the technique of removing the TFT layer from glass substrate by laser exposure is an issue for practical production [6]. For the low-temperature fabrication of the poly-Si TFT system on plastic, the de-hydrogenation annealing step before excimer laser annealing (ELA) for the Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) limits the maximum process temperature of the TFT. For sputtered Si deposition, although there are no hydrogen atoms in the film, Ar and O atoms are incorporated into the Si film as impurity contaminants, which restricts the crystal grain growth through laser annealing [7]. Promising poly-crystallization results for a direct current (DC)-sputtered Si film have been reported [8, 9], and the radio frequency (RF)-sputtered technique should be more favorable, including the deposition of a gate insulator film as an LTPS TFT fabrication process.