China
Africa
Explore chapters and articles related to this topic
Advanced Devices
Published in Chinmay K. Maiti, Introducing Technology Computer-Aided Design (TCAD), 2017
Polysilicon thin-film transistor (TFT) technology, an alternative to amorphous silicon technology has shown very high potential for high-performance, low-power, small and medium-size flat-panel mobile displays. Interest in polycrystalline silicon as the active material of TFTs has increased significantly in recent years. The polysilicon TFT technology has demonstrated its capabilities and compatibility with variety of substrates. TFT devices became the most important device for active matrix liquid crystal display (AMLCD) development. Currently, demand for TFT devices not only comes from the AMLCD industry but also from other emerging display industries such as organic light-emitting diode (OLED). Recently, TFT devices are also being considered for development of other large-area electronic systems such as bio and image sensors, printing actuators, and radio-frequency (RF) and wireless modules. The cross-sectional view of a typical self-aligned polysilicon TFT device is shown in Fig. 8.10.
Microstructural Characterization and Performance Measurements
Published in Zhigang Rick Li, Organic Light-Emitting Materials and Devices, 2017
Efficiency measurement results of OLEDs can be found in many published papers [3,4,7,8,11,12,14,15,80–83]. Mahon [83] assessed the efficiencies of 2.2″ active-matrix OLEDs made by Samsung with a polycrystalline–Si backplane and Universal Display’s phosphorescent red and green materials system. Figure 10.7 shows a power consumption simulation for a 2.2″ full-color OLED display using UDC’s phosphorescent OLEDs, small-molecule fluorescent devices, and polymer OLEDs along with a comparison of the power consumed by an active-matrix liquid crystal display (AMLCD) backlight. The use of phosphorescent OLED technology leads to a 100 cd/m2 display consuming only 50 mW, compared with 110–130 mW for other OLED technologies and the AMLCD backlight.
Top-Down Fabrication of ZnO NWFETs
Published in Razali Ismail, Mohammad Taghi Ahmadi, Sohail Anwar, Advanced Nanoelectronics, 2018
Sultan Suhana Mohamed, Ashburn Peter, Chong Harold M. H.
There has been a growing interest in using ZnO as a new material for TFT applications over the past decade due to its versatile film properties. Since the first demonstration of transparent ZnO TFTs in 2003 [9–12], there have been considerable advances in the scientific understanding of the properties of ZnO thin films. ZnO TFTs are already seen as potential alternative to the currently polysilicon-based TFT as a select transistor for active matrix liquid crystal display (AMLCD) technology. This is due to their high transparency in the visible region and high channel mobility compared to amorphous and polysilicon material, which only achieved a mobility of 1–10 cm2/Vs [7].
Recent progress of oxide-TFT-based inverter technology
Published in Journal of Information Display, 2021
Thin-film transistor (TFT) is the key technology for developing next-generation flexible/wearable electronics implemented on any low-cost substrates [1,2]. Among several TFT technologies including organic, amorphous Si, and low-temperature poly-Si (LTPS)-TFTs, oxide semiconductor-TFT (oxide-TFT) technology represented by amorphous-In–Ga–Zn–O (a-IGZO)-TFT is widely recognized as the most promising because the n-channel oxide-TFT meets the requirements for both the high device performance and high manufacturability for future electronics [3,4,5,6]. Since a-IGZO-TFT exhibiting excellent device characteristics such as high TFT mobility of >10 cm2/Vs, low-off current as low as <1 pA, low-voltage operation of ±3 V, steep subthreshold slope of ∼0.1 V/decade, etc. can be fabricated by conventional dc/rf/ac sputtering on a large-size glass substrate (for example, 2840 mm × 3370 mm (Gen 10+)) at the low-temperature process (<300oC), the a-IGZO-TFT have been already commercialized as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays (AM-FPDs) such as low-power consumption liquid crystal display (AMLCD) mobile display and high-resolution (3840 × 2160 (4K UHD))-PC monitor and high-resolution and large-size (4K-83″ class) organic light-emitting diode (AMOLED) TV panels and so on [7,8]. Moreover, the high on-current capability originating from high TFT mobility in n-channel oxide-TFT enable a peripheral integration of gate driver circuits, which is composed of several types of logic inverter gates, with a pixel circuit for AM-FPDs [9]. The gate driver monolithic circuit (GDM) technology offers the compactness and mechanical reliability, and overall cost reduction by eliminating the external driver ICs and is critical for mobile display applications with narrow bezels.