China
Africa
Explore chapters and articles related to this topic
Vertical Cavity Surface Emitting Laser
Published in Kenichi Iga, Yasuo Kokubun, Encyclopedic Handbook of Integrated Optics, 2018
The vertical cavity surface emitting laser (VCSEL) is a semiconductor laser which has a resonant cavity that is vertically formed with the surfaces of the epitaxial layers. The light output is taken from one of the mirror surfaces, as shown in Figure 1. The present author suggested a VCSEL device in 1977 [1]. The first report came out in 1978 [2]. The VCSEL lasing was demonstrated in 1979, where we used a GalnAsP/InP material for the active region, emitting 1300 nm wavelength light [3]. In 1986, we made a 6mA threshold GaAs device [4]. Then we employed metal organic chemical-vapor deposition (MOCVD) for its crystal growth and the first room temperature continuous wave (CW) laser, using GaAs material was demonstrated in 1988 [5]. Later, in 1989, Jewell and coworkers demonstrated a GalnAs VCSEL exhibiting a 2 mA threshold device [6].
Formalization for Formal Verification of an Optical Network-on-Chip Using DEVS
Published in Gabriel A. Wainer, Pieter J. Mosterman, Discrete-Event Modeling and Simulation, 2018
Luiza Gheorghe lugan, Gabriela Nicolescu, Ian O’Connor
The transmitter converts the digital signal in optical signals. The interface is mainly composed of Vertical Cavity Surface Emitting Lasers (VCSELs) that are the light source (block “Emission/Laser” in Figure 11.5) and drivers (blocks “Command/ Modulation” and “Command/Polarization” in Figure 11.5). VCSELs emit light vertically at the surface by stimulated emission via a current above a few microamperes. The module “Modulation” serves to modulate the current through the source, and consequently, the output optical power injected into the waveguide and “Polarization” serves for the orientation of the light waves.
CVD of superlattice films and their applications
Published in Kwang Leong Choy, Chemical Vapour Deposition (CVD), 2019
Vertical-cavity surface-emitting lasers (VCSEL) are semiconductor lasers, more specifically laser diodes with a monolithic laser resonator, where the emitted light leaves the device in a direction perpendicular to the surface of the chip. The resonator (cavity) is made with two semiconductor reflectors and, between those, there is an active region (gain structure). Both Bragg reflectors and active regions can be usually made of QWSL, such as AlGaAs/AlAs, GaInAs/InP or InP/InAlGaAs SLs grown by MOCVD.40–42
Integrated extended reach VCSEL interconnect with 8.5 Gbps data modulated forward Raman pump signals
Published in Journal of Modern Optics, 2019
G. M. Isoe, D. Kiboi Boiyo, E. K. Rotich, D. M. Osiemo, T. B. Gibbon
For large-scale commercial installation of cost-effective high bandwidth optical fibre networks, low-cost, power and spectral efficient VCSEL technology is a viable approach. This is due to their vast unique features such as low-power consumption, high-speed modulation with low drive currents and wavelength tuneability (16–22). Figure 2 shows experimentally measured optimization results of the considered VCSEL for direct modulation with the data. These measurements were taken by varying the bias current of the VCSEL carrier from 0.65 to 9.64 mA. As shown in Figure 2, a threshold current of 1.48 mA with a current rollover point of 9.64 mA was attained. The drive current also remained below 10 mA, therefore showing a good energy efficiency of the devise. Energy efficiency is an attractive feature for large-scale deployments of VCSELs, particularly in densely packed optical interconnects. The insert of Figure 2 shows central emission wavelengths of the considered VCSEL channel at different bias currents.
Ultra-fast optical switch with reconfigurable wavelength reuse functionality for dynamic flexible spectrum networks
Published in Journal of Modern Optics, 2019
G. M. Isoe, D. Kiboi. Boiyo, E. K. Rotich, T. B. Gibbon
The experimentally measured static performance of the considered VCSEL is shown in Figure 5(a). These measurements were attained by changing the bias current of the VCSEL carrier from 0.48 to 9.85 mA. As shown in Figure 5(a), the drive current of the VCSEL carrier remained below 10 mA. This good energy efficiency of VCSELs makes them ideal for densely high-speed optical applications.
A review of chewing detection for automated dietary monitoring
Published in Journal of the Chinese Institute of Engineers, 2022
Yanxin Wei, Khairun Nisa’ Minhad, Nur Asmiza Selamat, Sawal Hamid Md Ali, Mohammad Arif Sobhan Bhuiyan, Kelvin Jian Aun Ooi, Siti Balqis Samdin
A vertical cavity surface-emitting laser (VCSEL) is a surface-emitting semiconductor light source that emits laser beams in a direction perpendicular to its top surface. Individual VCSEL emitters are small, typically around 10 microns in diameter; they are often grouped into 2D arrays that collectively generate a much higher output power level (VCSEL).