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Polymer Semiconductors
Published in Inamuddin, Mohd Imran Ahamed, Rajender Boddula, Tariq Altalhi, Polymers in Energy Conversion and Storage, 2022
Moises Bustamante-Torres, Jocelyne Estrella-Nuñez, Odalys Torres, Sofía Abad-Sojos, Bryan Chiguano-Tapia, Emilio Bucio
During the past few years, polymer semiconductors have had wide demand in many fields such as medicine, the military, and chiefly electronics. They present the attractive characteristics of low production costs, high extinction coefficients, wide absorption bands, and high-quality flexibility and stability films in different environments. In 1987, the first electronic device based on semiconductors was the thin-film diode (Heeger 2010).
The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films
Published in Journal of Asian Ceramic Societies, 2021
Yan-Ping Jiang, Hang-Lv Zhou, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang
By observing the I–V curve of the analog RS behavior, it could be found that the typical diode rectification effect is accompanied by the RS behavior. In addition, there is an obvious Negative differential resistance (NDR) behavior in the negative bias region, as shown in the inset of Figure 2(c and d). It is generally believed that the causes of such rectification effect is mainly the migration of oxygen vacancies, ferroelectric polarization turnover and interface Schottky barrier [8,27,28]. In order to further verify the mechanism of such rectification effect, we first tested the ferroelectric properties of the samples, the result is shown in Figure 4. The P-V loop of the BFCO thin films at a maximum voltage of 6 V shows unsaturated hysteresis. Which is far less than the previously reported polarization intensity. This can be attributed to the film’s polycrystalline growth, And the surface leakage current is large. This result indicates that ferroelectric polarization does not play a leading role in thin film diode effects. So the diode effect of the thin film can be attributed to the Schottky barrier between Au/BFCO. However, the Schottky barrier model cannot explain the NDR behavior of the thin film.