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Design Challenges and Solutions in CMOS-Based FET
Published in Suman Lata Tripathi, Sobhit Saxena, Sushanta Kumar Mohapatra, Advanced VLSI Design and Testability Issues, 2020
Madhusmita Mishra, Abhishek Kumar
A spin transistor or spintronic transistor is a magnetically sensitive transistor. This is currently still being developed. It is also named for spintronics. Spin electronics caters to the analysis of the intrinsic spin of the electron and its related magnetic moment, in addition to its primal electronic charge, in solid-state devices. In spintronics, along with charge state, electron spins are put upon as a further degree of freedom with implications in the efficiency of data storage and transfer. Spintronic systems are regularly acknowledged in dilute magnetic semiconductors and Heusler alloys. They are quite compelling in the field of quantum computing and neuromorphic computing.
Motivation Behind High Electron Mobility Transistors
Published in D. Nirmal, J. Ajayan, Handbook for III-V High Electron Mobility Transistor Technologies, 2019
A second advantage of a spin transistor is that the spin of an electron is semi-permanent and can be used as means of creating cost-effective non-volatile solid-state storage that does not require the constant application of current to sustain. It is one of the technologies being explored for Magnetic Random Access Memory (MRAM).
Structural, optical, and magnetic properties of pristine and Cr doped WO3 nanoparticles
Published in Inorganic and Nano-Metal Chemistry, 2022
A. Jerold Antony, S. Mary Jelastin Kala, C. Joel, R. Biju Bennie, S. Vivetha
Dilute magnetic semiconductors (DMSs) have recently attracted the interest of the researchers to a great extent in recent times accounting for their exceptional magnetic properties and versatile applications in the field of spintronic devices.[1,2] Hence, a wide variety of semiconductor devices, such as lasers, spin-polarized light-emitting diodes and spin-transistor logic devices can be designed. The main idea of spintronics is to use both the charge and spin of electrons at the same time in order to enhance the performance of microelectronic devices of nanometer size. This type of devices requires materials with ferromagnetic ordering at operational temperatures compatible with the existing semiconductor materials. This device concept will be well suited by DMSs.[3]