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Hetero-Junction-Based Humidity Sensors
Published in Ghenadii Korotcenkov, Handbook of Humidity Measurement, 2019
The Schottky diode is a semiconductor-based diode that consists of a metal–semiconductor junction instead of a semiconductor–semiconductor p–n junction as in conventional diodes (Rhoderick 1978; Sharma 1984). Schottky diodes use the metal–semiconductor junction as the Schottky barrier. Since the barrier height is lower in metal–semiconductor junctions than in conventional p–n junctions, Schottky diodes have lower forward voltage drop. Based on the thermionic field emission conduction mechanism of the Schottky diode, the I–V characteristic of the diode for forward bias voltage, exceeding 3 kT, is given by (Rhoderick 1978) () I=Isat⋅exp(qVnkT)
Experimental Dosimetry
Published in Ben Greenebaum, Frank Barnes, Bioengineering and Biophysical Aspects of Electromagnetic Fields, 2018
A Schottky diode is also known as hot-carrier diode. It consumes less power than the P–N junction diode and it is widely used for RF applications as a detector. It is a metal semiconductor diode and the switching speed is often limited by the recombination time for the carriers in the semiconductor. In a Schottky diode, the voltage drop normally ranges between 0.15 and 0.45 volts while in a PN junction semiconductor diode, the voltage drop is between 0.6 to 1.7 volts. This lower voltage drop and faster recombination lifetimes provide higher switching speed and better system efficiency. In a Schottky diode, a semiconductor–metal junction is formed between a semiconductor and a metal, which creates a Schottky barrier. A Schottky diode with equivalent circuit is shown in Figure 10.11.
Circuits and Logic Gates
Published in Julio Sanchez, Maria P. Canton, Microcontroller Programming, 2018
Julio Sanchez, Maria P. Canton
In 1971 a major advance in TTL logic occurred with the introduction of TTL devices that incorporate Schottky diodes. They are based on the property of aluminum to act much like a p-type semiconductor when in contact with n-type silicon. The Schottky diode acts like an ordinary p-n diode except that it has a faster response time and the voltage drop is about 0.3 volts instead of 0.6 volts. When a Schottky diode is connected between the base and the collector of a bipolar transistor, the transistor is prevented from going into saturation. The Schottky diode/transistor combination, known as a Schottky transistor, has a significantly faster switching speed. Schottky TTL logic devices have part numbers 74SXXX and give three times the speed of standard TTL using only twice the power.
Performance Evaluation of MIMO-OFDM-FSO with Modified Receiver
Published in IETE Journal of Research, 2023
Chinmayee Panda, Urmila Bhanja
The MIMO-OFDM receiver includes a Schottky diode-based integrator. The integrator consists of a resistor, capacitor and the Schottky diode. The Schottky diode is preferred due to its lesser turn-on voltage, faster-switching speed, and higher frequency response. The receiver contains an optical preamplifier that amplifies the signal but generates non-linear distortion, which is eliminated by the Schottky diode incorporated with the integrator. At high frequencies, the Schottky diode behaves like an RC feedback circuit that reduces the non-linear distortion created by amplifiers to enhance the BER performance significantly.
An Overview on MOSFET Drivers and Converter Applications
Published in Electric Power Components and Systems, 2021
Mustafa Ergin Şahin, Frede Blaabjerg
One of the other principles to accelerate the MOSFET speed rise circuits' turn-off operation is mentioned here. The turn-on speed is limited by the turn-off or reverses recovery speed, usually restricted by the power supply's rectifier element. The rapid switching behavior is specified by the diode's reverse recovery characteristics instead of the resistance of the gate drive circuit, as shown in Figure 11(a). Typical applications are about 150 mA for a 1N4148 diode and 300 mA for a BAS40 Schottky diode. The most known circuit for fast turn-off switching is given in Figure 11(b) [88].
A triple band circularly polarized rectenna for RF energy harvesting
Published in Electromagnetics, 2019
Neeta Singh, Binod Kumar Kanaujia, Mirza Tariq Beg, Sachin Kumar
The voltage doubler topology with Schottky diode HSMS282E is used for designing the rectifying circuit shown in Figure 6. Due to its low turn-on voltage, the Schottky diode is chosen for the rectification of RF signals. Two surface mounted capacitors are used (with a value 5 pF) to block RF signals and pass DC signal only towards the load.