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Hetero-Junction-Based Humidity Sensors
Published in Ghenadii Korotcenkov, Handbook of Humidity Measurement, 2019
The Schottky diode is a semiconductor-based diode that consists of a metal–semiconductor junction instead of a semiconductor–semiconductor p–n junction as in conventional diodes (Rhoderick 1978; Sharma 1984). Schottky diodes use the metal–semiconductor junction as the Schottky barrier. Since the barrier height is lower in metal–semiconductor junctions than in conventional p–n junctions, Schottky diodes have lower forward voltage drop. Based on the thermionic field emission conduction mechanism of the Schottky diode, the I–V characteristic of the diode for forward bias voltage, exceeding 3 kT, is given by (Rhoderick 1978) () I=Isat⋅exp(qVnkT)
Experimental Dosimetry
Published in Ben Greenebaum, Frank Barnes, Bioengineering and Biophysical Aspects of Electromagnetic Fields, 2018
A Schottky diode is also known as hot-carrier diode. It consumes less power than the P–N junction diode and it is widely used for RF applications as a detector. It is a metal semiconductor diode and the switching speed is often limited by the recombination time for the carriers in the semiconductor. In a Schottky diode, the voltage drop normally ranges between 0.15 and 0.45 volts while in a PN junction semiconductor diode, the voltage drop is between 0.6 to 1.7 volts. This lower voltage drop and faster recombination lifetimes provide higher switching speed and better system efficiency. In a Schottky diode, a semiconductor–metal junction is formed between a semiconductor and a metal, which creates a Schottky barrier. A Schottky diode with equivalent circuit is shown in Figure 10.11.
60, and Carbon Nanotubes for Optoelectronic Devices
Published in Sam-Shajing Sun, Larry R. Dalton, Introduction to Organic Electronic and Optoelectronic Materials and Devices, 2016
Liangti Qu, Liming Dai, Sam-Shajing Sun
The Schottky diode (named after German physicist Walter H. Schottky) is a semiconductor diode with a low forward voltage drop and a very fast switching action desirable for switch mode power supplies, discharge-protection for solar cells connected to lead-acid batteries, prevention of transistor saturation, and many others. Instead of a semiconductor–semiconductor junction, a Schottky diode uses a metal–semiconductor junction as a Schottky barrier. During normal operation, Schottky diode allows majority carriers (e.g., electrons for an n-doped semiconductor) to be quickly injected into the conduction band of the metal contact on the other side of the diode to become free moving electrons. This minimizes the possible slow random recombination of n- and p-type carriers and causes conduction faster than an ordinary p–n rectifier diode, and hence faster and smaller circuits that can even operate at higher frequencies. Figure 8.3 shows a typical Schottky barrier diode structure with polyacetylene sandwiched between two metal contact layers, in which one of the metal layers (i.e., Al) forms the Schottky barrier with polyacetylene and the other (gold) provides an ohmic contact.
Electrostatically Doped Schottky barrier tunnel field effect transistor
Published in International Journal of Electronics Letters, 2022
Harendra Kumar, Sangeeta Singh, Kumari Nibha Priyadarshani
For the DC performance estimation, the parameters varied here are work-function of PtSi for varying the effective schottky barrier height, channel length, silicon film thickness, and temperature. As the considered structure is electrostatically doped, it is very crucial to analyse the charge carrier concentrations in OFF and ON state to guarantee the retained charge carrier profile even without actual doping. Hence, Figure 2(a and b) demonstrate the charge carrier concentration of ED-SB-TFET for ON and OFF state, respectively. This clearly verifies that the required charge carrier concentration for ED-SB-TFET (P-I-N) has been achieved without actual metallurgical doping.
The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature
Published in International Journal of Electronics, 2019
Figure 3 shows the forward and reverse bias I-V plots of Re/n-Si Schottky barrier diodes at room temperature. As can be seen in Figure 3, the I-V characteristics of Re/n-Si Schottky barrier diode shows a rectifier behaviour. That is, the forward current increases exponentially with the applied bias voltage, while the reverse current shows weak voltage dependence. As shown in Figure 3, the I-V curves of Re/n-Si Schottky barrier diode under the forward bias condition show the exponential increase in current at low voltage due to the decrease in the depletion layer expanse at the MS interfaces (Ahmad & Sayyad, 2009). This means that forward-bias I-V curves are linear on a semi-logarithmic scale at low forward bias voltages but this structure deviates considerably from linearity at higher voltages due to the effect of series resistance. Thus, the forward bias I-V curves show only one linear region in intermediate voltages. Furthermore, the I-V curves of the Re/n-Si Schottky barrier diode are non-linear and asymmetric and show the rectification behaviour with a small leakage current of 9.88 × 10−6 A at a reverse bias voltage of 1.0 V, which gives the indication of the formation of the depletion regions at the interfaces of the structure. According to the Schottky theory for a MS structure with a series resistance, the C-V relation according to the thermionic emission (TE) theory (V kT/q) can be expressed as follows (Rhoderick & Williams, 1988; Sze, 2006):
Carbon-based innovative materials for nuclear physics applications (CIMA), INFN project
Published in Radiation Effects and Defects in Solids, 2021
L. Torrisi, L. Silipigni, L. Calcagno, M. Cutroneo, A. Torrisi
Figure 6(b) reports the I-V characteristics of the GO/Si Schottky junctions, which exhibit a Schottky barrier and a rectifying behavior. At room temperature the measured barrier potential in such junction is about 0.4 eV, a value in agreement with the theoretical expected datum from the relation: where ΦB is the Schottky barrier height, ΦG the conductive material work-function and XS the electron affinity of the semiconductor. Assuming a work-function of 4.5 eV for the reduced graphene oxide and an electron affinity of 4.05 eV for Si, in fact, is obtained ΦB= 0.45 eV, according to the literature (47).