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Hetero-Junction-Based Humidity Sensors
Published in Ghenadii Korotcenkov, Handbook of Humidity Measurement, 2019
The Schottky diode is a semiconductor-based diode that consists of a metal–semiconductor junction instead of a semiconductor–semiconductor p–n junction as in conventional diodes (Rhoderick 1978; Sharma 1984). Schottky diodes use the metal–semiconductor junction as the Schottky barrier. Since the barrier height is lower in metal–semiconductor junctions than in conventional p–n junctions, Schottky diodes have lower forward voltage drop. Based on the thermionic field emission conduction mechanism of the Schottky diode, the I–V characteristic of the diode for forward bias voltage, exceeding 3 kT, is given by (Rhoderick 1978) () I=Isat⋅exp(qVnkT)
Applications of Graphene
Published in Andre U. Sokolnikov, Graphene for Defense and Security, 2017
Epitaxial graphene grown on 4H SiC (0001) that is the silicon polar surface has features that influence the characteristics of the FETs that are grown on it. The adherence of the epitaxial graphene layer is determined by van der Waals attraction and Schottky barriers are formed when graphene (cleaved by mechanical means) is deposited on SiC. The barrier is a strong rectifier. The Schottky barrier is a potential energy barrier which is formed at a metal-semiconductor junction. One of the most important characteristics of the Schottky barrier is its height, Φ B. The value of Φ B is determined by the metal and semiconductor work functions. The barrier height may be estimated from the forward-bias exponential curve12. The barrier characteristics are different depending on what substrate it is created upon. There are three known cases: epitaxially grown (EG) in situ, on the SiC surface and on the SiC with a micro-mechanically cleaved monolayer graphene. The barrier has been successfully reduced for epitaxially grown graphene (Fig. 9.11).
Electrochemical Sensors
Published in John Vetelino, Aravind Reghu, Introduction to Sensors, 2017
In the case of semiconducting sensing films, again two types of contacts arise: a metal-semiconductor and metal-insulating oxide-semiconductor. The metal-semiconductor junction is the familiar Schottky barrier, where the current may be a nonlinear function of the voltage. The contact resistance associated with this junction is given by the following relation [1]:
SolCelSim: simulation of charge transport in solar cells developed in Comsol Application Builder
Published in International Journal of Modelling and Simulation, 2022
Joao A. T. P. Vieira, Peter Cendula
Schottky contact describes rectifying metal-semiconductor junction or semiconductor-electrolyte junction. The current-voltage characteristic of the Schottky barrier contact depend on the potential barrier formed at the junction. The ideal height of this potential barrier is given by