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Semiconductor Diode
Published in Bogdan M. Wilamowski, J. David Irwin, Fundamentals of Industrial Electronics, 2018
The reverse leakage current in silicon diodes is mainly caused by the electron-hole generation in the depletion layer. This current is proportional to the number of generation–recombination centers. These centers are formed either by a crystal imperfection or deep impurities, which create energy states near the center of the energy gap. Once the reverse voltage is applied, the size of the depletion region and the number of generation–recombination centers increase. Thus, the leakage current is proportional to the thickness of the depletion layer w(v). For a step-abrupt junction () w=2εεo(Vpn−v)qNeff
Power semiconductors
Published in D.A. Bradley, Power Electronics, 2017
If a reverse voltage – cathode positive with respect to anode – is applied, the electric field at the junction is reinforced, increasing the height of the potential barrier and increasing the energy required by a majority carrier to cross this barrier. The resulting small reverse leakage current shown in the diode static characteristic of Fig. 1.2 is due to the flow of minority carriers across the junction. The magnitude of the reverse leakage current increases with temperature because the number of minority carriers available increases with the temperature of the material.
Introduction to Nanosensors
Published in Vinod Kumar Khanna, Nanosensors, 2021
On changing the connections of the power supply, with a positive voltage on the N-side and a negative voltage on the P-side, the diode is said to be reverse biased. Here, the depletion region is widened, and the thickness of the depletion region depends on the applied voltage. Any minority carriers in the depletion region, or close to it, such as electrons on the P-side or holes in the N-side, are carried and swept away by the applied field, leading to a reverse leakage current. Thus, the reverse current is essentially a drift current.
Design of Synchronous RF-DC Rectifier for Energy Harvesting System
Published in International Journal of Electronics, 2023
The leakage current waveforms of the rectifying transistors is shown in Figure 10. The leakage current of PMOS2 is more than 70 , which can greatly deteriorate the circuit efficiency. Compared with the circuit shown in Figure 5(a), the leakage current of the proposed circuit with synchronous rectifier appears only in the transient moment with the reversed input signal. So the reverse leakage current is apparently suppressed by the synchronous switch-controlled threshold compensation rectifying circuit. On the stable state, the reverse leakage current of the optimised circuit is only 16.24 and 15.24 when PMOS3 and NMOS3 are turned on alternately, so the rectifying transistor is turned off completely during the resting time. The synchronous threshold compensation technology is a feasible way to reduce the reverse leakage current.
Characterization the influences of diodes to piezoelectric energy harvester
Published in International Journal of Smart and Nano Materials, 2018
Ming Yuan, Ziping Cao, Jun Luo
The diode’s reverse leakage current is usually weak, which makes direct current measurement becomes difficult. To obtain reliable reverse leakage current value, the test diode is connected with a 100 kΩ resistor in series. A DC power source is used to provide constant DC reverse voltage (10V) to the test circuit. The voltage on the resistor can be obtained via the virtual Agilent 34401A Multimeter and the reverse leakage current value is calculated according to Equation (3).