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Polymer Organic Photovoltaics
Published in Inamuddin, Mohd Imran Ahamed, Rajender Boddula, Tariq Altalhi, Polymers in Energy Conversion and Storage, 2022
In OPV, with the increase of temperature, the mobility of the charge carriers increases. In organic materials, phonons considerably assist the delocalization of charge carrying species. The probability of finding a sufficiently energized phonon is less at low temperature. Therefore, the photocurrent at low temperature is reduced. With the increase of temperature, the short circuit current density (Jsc) increases, then proceeds towards saturation, and then decreases while the open circuit voltage (Voc) linearly decreases. The fill factor (FF) which depends on the short circuit current and open circuit voltage follows their variations. Thus, with increase of temperature, the PCE of OPV first increases then tends to decrease, passing through the maximum value (Belhocine et al. 2012).
Photovoltaic Performance of Titanium Oxide/Metal-Organic Framework Nanocomposite
Published in Anish Khan, Mohammad Jawaid, Abdullah Mohammed Ahmed Asiri, Wei Ni, Mohammed Muzibur Rahman, Metal-Organic Framework Nanocomposites, 2020
Phuti S. Ramaripa, Kerileng M. Molapo, Thabang R. Somo, Malesela D. Teffu, Mpitloane J. Hato, Manoko S. Maubane-Nkadimeng, Katlego Makgopa, Emmanuel I. Iwouha, Kwena D. Modibane
When a solar cell panel interacts with light, the photocurrent can be measured. There are many factors that affect the value of the photocurrent such as the quality of the device, incident wavelength, and the surface area of the device being illuminated. Therefore, different parameters are employed to determine the energy efficiency of the PVCs such as the maximum power point (Pmax), the energy conversion efficiency (ƞ), and the fill factor (FF) [22].
Photovoltaic Energy Sources
Published in Viktor M. Perelmuter, Advanced Simulation of Alternative Energy, 2020
The magnitude of the photocurrent depends on the irradiance level and on the temperature; this dependence may be taken as Iph=Isr[1+ak(Tc−Tcr)]Q1000 ,
Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks
Published in Science and Technology of Advanced Materials, 2023
Yi Zhang, Zhuohui Huang, Jie Jiang
Optoelectronic synaptic transistors have three electrodes: the source, gate and drain, respectively. The channel current of an optoelectronic synaptic transistor can be modulated by an electrical gate spike or an external light stimulus. In artificial synapses, the electrical spike applied to the gate or the light spike in the channel is considered as a presynaptic signal stimulus. The change in the conductivity of semiconductor channel is considered to be the change of synaptic weight. The current between the source and drain is used to mimic the postsynaptic current response. The electrical spike applied to the gate induces a transient channel current which is very similar to EPSC in biological synapses. When the active channel layer is illuminated by light, a photocurrent can be generated. The carrier density in channel can be effectively modulated by the both electrical gating and light stimulation. Thus, the device can mimic the synaptic behaviors under photoelectric stimuli [86,87].
Cu2ZnSnS4 films with Cu-poor composition prepared by spin coating from a nontoxic methanol-based solution: the effect of annealing temperature
Published in Journal of Asian Ceramic Societies, 2020
Films were characterized by energy-dispersive x-ray, EDX, analysis using the EDS spectrometer (Oxford INCA X-act) of a scanning electron microscope, SEM (Jeol JSM-7001 F), x-ray diffraction, XRD (Siemens D500, CuKα: 0.154056 nm), Raman spectroscopy (Renishaw inVia, excitation wavelength 512 nm), Hall-effect measurement, HEM (Ecopia HMS-3000, 0.556 T, van der Pauw four-point probe configuration), and photocurrent spectroscopy. The films’ lateral photocurrent was measured across two parallel conducting strips (1–2 mm apart) deposited on the film surface. The gap between the strips was illuminated by a monochromatic light while a potential difference of 5 V was maintained across the strips. The photocurrent, normalized by the incident photon flux, was measured at different incident wavelengths using a setup consisting from grating monochromator (Sciencetech 9055), lock-in amplifier (Stanford Research SR 530), current amplifier (Keithley 428), light source (Sciencetech 250 W QTH), USB data acquisition (Sciencetech), and mechanical chopper. The film thickness, d, was determined from the measured mass of the film, m, its surface area, A, and the mass density, δ, of CZTS using d = m/(δA). The results were in good agreement with the SEM-determined values.
Electronic and optoelectronic applications of solution-processed two-dimensional materials
Published in Science and Technology of Advanced Materials, 2019
The principle for photodetectors is absorbing and transferring light to electrical signals including photocurrent or photovoltage. Therefore, the optical properties of materials, especially absorptivity and photoelectrical conversion, are the major factors for photodetectors and optoelectronics. Large number of 2D materials ensure their application in photodetectors because they can absorb light across broad wavelength range from infrared wavelength to deep UV. Optical properties can be widely tuned even in one 2D material, by changing its thickness or adjusting strain, making it suitable for multi-functional optoelectronic devices [35,80]. To be specific, there are many 2D materials having strong interaction with light based on photovoltaic effect, photo-thermoelectric effect, bolometric effect, or photogating effect [81–83]. For the photovoltaic effect, photovoltaic current is generated in the electric fields of junctions between p-type and n-type regions where the induced electron-hole pairs are separated [82]. Photo-thermoelectric effect refers to the hot-carrier-assisted transport phenomenon in which the photo energy can produce hot electrons thus further resulting in a photovoltage. The bolometric effect is also associated with the transport conductance change induced by heating which is produced by the incident photons. Finally, for the photogating effect, which is commonly observed in low-dimensional systems, is considered as that conductance modulation can be achieved by photoinduced gate voltage rather than by trap states [84].