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Spin Transport in Si and Ge
Published in Evgeny Y. Tsymbal, Igor Žutić, Spintronics Handbook: Spin Transport and Magnetism, Second Edition, 2019
On a historical note, our device is essentially a solid-state analog of experiments performed in the 1950s that were used to determine the g-factor of the free electron in vacuum using Mott scattering as spin polarizer and analyzer and spin precession during time-of-flight in a solenoid [64]. In our case, we already know the g-factor (from e.g. ESR lines), so our experiments in strong drift electric fields where spin dephasing is weak can be used to measure transit time with t=h/gμBB2π, where B2π is the magnetic field period of the observed precession oscillations, despite the fact that we make DC measurements, not time-of-flight [150, 151]. Typical spin-precession data, indicating transit time of approximately 12ns to cross 350 μm undoped Si in an electric field of ≈580V/cm, is shown in Figure 3.4a.
Spin-Orbit Torques
Published in Evgeny Y. Tsymbal, Žutić Igor, Spintronics Handbook: Spin Transport and Magnetism, Second Edition, 2019
Aurélien Manchon, Hyunsoo Yang
The spin Hall effect, along with its ferromagnetic counterpart, the anomalous Hall effect, has been intensively scrutinized for a number of years. It is not our intention to enter into the details of previous works and we refer the reader to the excellent specialized reviews available [19]. It is, however, instructive to summarize these works from the perspective of experiments: “In order to obtain a large spin Hall conversion efficiency, should the material be more or less resistive?”. It turns out that the answer depends on the nature of the spin Hall mechanism. Two main classes of mechanisms have been identified. The first class consists of mechanisms that directly depend on the density of scatterers, such that the Hall conductivity scales with the longitudinal conductivity, σH~σxx. In the limit of weak short-range impurities, the main effect is the so-called skew or Mott scattering [19]. It is important in certain compounds such as heavy metals (Bi, Ir) as well as rare-earth-doped light metals [20,21].
All-Electric Spintronics through Surface/Interface Effects
Published in S. K. Sharma, Exchange Bias, 2017
As an unusual magnetoelectric effect, the well-known spin Hall effect (SHE) offers strong evidence of electrical spin manipulation based on Rashba SOC. Analogous to the conventional Hall effect, the SHE refers to spin accumulation at the edges of the sample when applying a pure charge current j x (Figure 7.24a) (Dyakonov and Perel, 1971). This occurs through two types of mechanism. The extrinsic one relates to spin-dependent Mott scattering (Hirsch, 1999). Electrons with different spin projections diffuse toward opposite directions after scattering against SOC impurities. The intrinsic one concerns the spin-dependent distortion of electron trajectories in the presence of a SOC band structure (Murakami et al., 2003; Sinova et al., 2004).
Direct observation of spin-resolved valence band electronic states from a buried magnetic layer with hard X-ray photoemission
Published in Science and Technology of Advanced Materials, 2021
Recently, in spin- and angle-resolved photoelectron spectroscopy (SARPES) using VUV light, high-efficiency (high FOM) spin detectors have been used for high-throughput and high-resolution experiments instead of the standard Mott detector. The very low energy electron diffraction (VLEED) type detector using the Fe(001)-p(1×-1)-O film [21] and the W(110) and Au/Ir(100) spin-filter [22,23] with the 2D multi-channel detection have been used in the SARPES experiments to enhance the efficiency of SARPES experiments. These works strongly suggest that the use of multi-channel spin detection is key for high-throughput SARPES experiments. Thus, we considered to use a multi-channel spin-filter in spin-HAXPES for high-throughput experiments as schematically shown in Figure 2(b,c). High-kinetic energy photoelectron with 6 keV emitted from the sample are scattered by a Au target film, and then the scattered electrons are analysed by a hemispherical electron analyser. This experimental setup allows us to perform the 2D multi-channel detection in spin-HAXPES. This scattering process involves the Mott scattering, and a Au film acts as a spin-filter in this case. In addition, we do not need to modify the electron analyser as seen in Figure 2(a,b), but need only to introduce a customised sample carrier as shown in Figure 2(d), which can mount thin films of sample and Au simultaneously.
Unified Dosimetry Quality Audit Index: an integrated Monte Carlo model-based quality assurance ranking for radiotherapy treatment of glioblastoma multiforme
Published in Radiation Effects and Defects in Solids, 2023
Praveen Kumar C, Lalit M. Aggarwal, Saju Bhasi, Neeraj Sharma
() The total Mott scattering cross-section for an electron travelling with energy