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Design of Power-Rail ESD Clamp Circuits with Gate-Leakage Consideration in Nanoscale CMOS Technology
Published in Juin J. Liou, Krzysztof Iniewski, Electrostatic Discharge Protection, 2017
Electrostatic discharge (ESD) phenomenon is a charge flow when two objects with different voltage potentials reach contact. Such ESD events can cause serious damage to the integrated circuit (IC) products, during assembly, testing, and manufacturing. To protect the IC products with the required ESD specifications, typically such as 2 kV in human body model (HBM) [1] and 200 V in machine model (MM) [2], the whole-chip ESD protection scheme formed with the power-rail ESD clamp circuit had been often used in the modern IC products [3]. As shown in Figure 5.1, the power-rail ESD clamp circuit is a vital element for ESD protection under different ESD stress modes. The ESD stress modes include Vdd-to-Vss (or Vss-to-Vdd) ESD stress between the rails, as well as the positive-to-Vss (PS) mode, negative-to-Vss (NS) mode, positive-to-Vdd (PD) mode, and negative-to-Vdd (ND) mode, from input/output (I/O) to Vdd/Vss. Therefore, the power-rail ESD clamp circuit must provide low-impedance discharging path under ESD events but keep in off-state with standby leakage current as low as possible under normal circuit operation conditions.
Electrostatic Discharge and Electrical Overstress
Published in Michael G. Pecht, Riko Radojcic, Gopal Rao, Guidebook for Managing Silicon Chip Reliability, 2017
Michael G. Pecht, Riko Radojcic, Gopal Rao
There are three models to describe different ESD phenomena that occur in electronic components:The human body model (HBM) that simulates the effects of human interaction with the components. The HBM is represented by a discharge through a series RC circuit with the resistance of 1500 Ω, and the capacitance of 100 pF. A person can, through the triboelectric charge effect build up 1000s of V by simply walking on an insulated surface (e.g., carpet), or using insulated footwear, given the right set of environmental conditions (typically low humidity). The characteristic waveform of the discharge associated with a person coming in electrical contact with a body at some other potential is then modeled by the HBM circuit.The machine model (MM) that describes the effects of charge transference between machines and components. The machine models are intended to model the ESD produced when contact is made between a charged object and an IC during the manufacturing process, at steps such as wire bonding, board assembly, or test. Unlike the human body model, industry does not have a long tradition with the machine model specifications, tests, and cures. Therefore, two specifications originating from Japan and Phillips Research Laboratories are used Generally MM is simulated by a discharge through a RC circuit with the resistance of 0 Ω, and the capacitance of 200 pF.The charged-device model (CDM) that describes the effects of rapid discharge of the charge collected in the device itself. An electronic package can pick up a charge from the triboelectric interaction with, for example, the shipping tubes or marking equipment. When the package is subsequently grounded this collected charge dissipates to ground. Whereas the CDM has not been fully standardized throughout the industry, it is generally simulated by a discharge through a RC circuit with the resistance of 0 Ω, and the capacitance of 0 pF.
The ESD Control Program Handbook
Published in Technometrics, 2022
Chapter 1 introduces several fundamental terminology and provides a big picture with key concepts in ESD control. Chapter 2 presents in more detail the principles of ESD control. Under the overview of ESD control, the author discusses contact charge generation, electrostatic charge build-up based on mathematical models. After that, electrostatic fields/discharges/attraction, electronic models of ESD are outlined. Finally, strategies to avoid ESD damage are presented. Chapter 3 focuses on electrostatic discharge-sensitive (ESDS) devices, which are components that are susceptible to ESD damage. To measure ESD susceptibility, the author suggests a simple electronic circuit to model ESD, and provides several strategies (e.g., human body model, machine model, charged device model) to test susceptibility. Moreover, some detailed items and descriptions of ESD susceptibility of components, types of ESD damage, and system-level ESD are mentioned.
Electrostatic hazards of charging of bedclothes and ignition in medical facilities
Published in International Journal of Occupational Safety and Ergonomics, 2019
Yuta Endo, Atsushi Ohsawa, Mizuki Yamaguma
Figure 2 shows the experimental apparatus, consisting of a spark discharge device (MIES-10; Environmental Technology, Japan), a 12-cm diameter stainless plate, placed on a heater, and a 10-mm diameter spherical electrode. The capacitance of the charging capacitor was 100 pF, which is approximately the same as the capacitance of the human body. The resistance was 300 or 1500 Ω, referring to the human body model in the electrostatic discharge immunity test [30,32]. In the experiment, the charging voltage of the capacitor was 6–16 kV. The voltage of the spherical electrode measured with a digital oscilloscope (DPO 3032; Tektronix, USA) and a high-voltage probe (P6015A; Tektronix, USA) was approximately 70% of the set voltage of the capacitor. This voltage reduction was caused by the stray capacitor of the spherical electrode and the wires, approximately 30 pF measured with the LCR meter (U1733C; Agilent, USA), which slightly depends on the position of the electrode.