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Power Electronics
Published in Timothy L. Skvarenina, The Power Electronics Handbook, 2018
Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang
The GTO is a power switching device that can be turned on by a short pulse of gate current and turned off by a reverse gate pulse. This reverse gate current amplitude is dependent on the anode current to be turned off. Hence there is no need for an external commutation circuit to turn it off. Because turn-off is provided by bypassing carriers directly to the gate circuit, its turn-off time is short, thus giving it more capability for high-frequency operation than thyristors. The GTO symbol and turn-off characteristics are shown in Fig. 1.3.
New Methods of Increasing Transmission Capacity
Published in Anjan K. Deb, Power Line Ampacity System, 2017
The Gate Turn Off Thyristor (GTO) is turned on by a short pulse of gate current, and is turned off by applying a reverse gate signal. It has a short turn-off time in the order of tens of nanoseconds, which is much faster than a thyristor. The main disadvantage of a GTO is the high current requirement to turn off current. It has a low ratio of commutation current to turn off current, generally in the range of 3 to 5. This reduces the power that can be commuted by a GTO in a FACTS application.
Power Semiconductors
Published in Nihal Kularatna, DC Power Supplies Power Management and Surge Protection for Power Electronic Systems, 2018
A gate turn-off thyristor (GTO) is a thyristorlike latching device that can be turned off by application of a negative pulse of current to its gate. This gate turn-off capability is advantageous because it provides increased flexibility in circuit application. It now becomes possible to control power in DC circuits without the use of elaborate commutation circuitry.
Comparative Analysis of Induction Motor Drive with Chopper Controlled SPRS Employing Various Inverter Configurations
Published in IETE Journal of Research, 2019
Sita Ram Bhardwaj, O. P. Rahi, Veena Sharma
The power diode and SCR devices have the dominant conduction losses and negligible switching losses. The power diodes are available in the voltage/current and frequency maximum range of 3 kV/3.5 kA; 1 kHz while the SCR are available with 6 kV/2.2 kA, 1 kHz respectively. The GTO has higher conduction as well as switching loss and maximum ratings of 4 kV/3 kA, 10 kHz. Thus, the SCR and GTO semiconductor devices are utilized for high-power low-frequency applications. The MOSFET devices have high conduction loss and low switching loss, therefore, more suitable for low-power high-frequency applications. The MOSFET are available in the maximum range of 1 kV/50 A, 100 kHz. The IGBT devices have low conduction as well as switching losses and are available in the maximum range of 3.5 kV/1.2 kA, 20 kHz. Hence, the IGBT devices are highly efficentive and more suitable for medium power and frequency applications [20].