China
Africa
Explore chapters and articles related to this topic
Transport Phenomena in Semiconductors
Published in Jyoti Prasad Banerjee, Suranjana Banerjee, Physics of Semiconductors and Nanostructures, 2019
Jyoti Prasad Banerjee, Suranjana Banerjee
Figure 4.8 shows that the drift velocity initially increases linearly following Ohm’s law at lower field range up to 105 Vm−1. The slope of the curve in this region is constant and provides the value of low-field mobility. The electron temperature is equal to lattice temperature, i.e., Te = TL. In the intermediate-field range (105 – 107 Vm−1), the drift velocity increases nonlinearly with field and Te > TL (warm electron region). At very high fields greater than 105 V/cm, the drift velocity gets saturated and becomes independent of electric field. This is the hot electron behavior for which Te ≫ TL. The value of saturated drift velocity of carries for most of the semiconductors is of the order of 105 ms−1. The saturated draft velocity of silicon and GaAs decreases with the increase of temperature.
Silicon nanocrystals from plasma synthesis
Published in Klaus D. Sattler, Silicon Nanomaterials Sourcebook, 2017
Samantha K. Ehrenberg, Katharine I. Hunter, Uwe R. Kortshagen
The plasma electron temperature, Te, is an equally important parameter, as it determines the rate constants for most electron-induced reactions. It can be estimated from a simple particle balance for the electrons. In steady state, the rate at which electrons are created in the bulk of the plasma by ionization, Rize−/cm3, must be equal to the rate at which they are lost by diffusion to the walls of the plasma container, Re−losse−/cm2:
Control Strategies and Applicable Technologies
Published in Winston Chow, Katherine K. Connor, Peter Mueller, Ronald Wyzga, Donald Porcella, Leonard Levin, Ramsay Chang, Managing Hazardous Air Pollutants, 2020
Copious active chemical species (radicals) are produced in a low-temperature, normal-pressure plasma region by collision of energy-enhanced electrons with gaseous molecules, and the molecules of pollutants are either oxidized or decomposed by reduction, depending upon the nature of the radicals: oxidizing radicals being O, 02*, O3, OH, etc. and reducing radicals NH, NH2, H, N, etc. Only electrons play an essential role in the radical generation, while ions play a role of raising the gas temperature to cause sparking and arcing. Hence, the plasma should be a highly nonequilibrium one in which the electron temperature is sufficiently high and ion temperature low enough.
Cross Comparisons of X-Ray Imaging Crystal Spectrometer and Charge Exchange Spectroscopy from KSTAR
Published in Fusion Science and Technology, 2020
The temporal evolution of the main plasma parameters including the core toroidal rotation, ion/electron temperature, and electron density are shown in Fig. 2. The plasma current is 0.8 MA, and the electron density is in the range of 1 × 1019 to 3 × 1019 m3. Multiple short NBI blips are applied for the CES measurement instead of the regular beam modulation. The short beam blip technique is frequently used for CES measurements in the ohmic discharges as mentioned before.1 The toroidal rotation and ion/electron temperature are measured by the XICS. The toroidal rotation and ion temperature are simultaneously measured by CES. The electron temperature is also measured by electron cyclotron emission (ECE) diagnostics.
Numerical and Experimental Investigation of the Channel Expansion of a Low-Energy Spark in the Air
Published in Combustion Science and Technology, 2019
K. V. Korytchenko, S. Essmann, D. Markus, U. Maas, E. V. Poklonskii
For our study, we used a relationship from work (Banks, 1966) that concerned the transport cross-section of elastic collisions between electrons on the one hand, and atoms of oxygen and nitrogen on the other. This relationship is dependent on the electron temperature.