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Low Power CMOS VLSI Design
Published in Keshab K. Parhi, Takao Nishitani, Digital Signal Processing for Multimedia Systems, 2018
Tadahiro Kuroda, Takayasu Sakurai
Reducing transistor size reduces the gate capacitance and the diffusion capacitance. In [28] it was reported that the total size of one million transistors in a gate array design was reduced to 1/8 of original design through transistor size optimization while maintaining the circuit speed. Consequently, the total load capacitance was reduced to 1/3, which saved 55 % of the power dissipation on average. It is often seen that bigger transistors are used in macrocells in a cell library so that they can drive even a long wire within an acceptable delay time.
Semiconductor Diode
Published in Bogdan M. Wilamowski, J. David Irwin, Fundamentals of Industrial Electronics, 2018
Two types of capacitances are associated with a diode junction. The first capacitance, known as diffusion capacitance, is proportional to the diode current. This capacitance exists only for the forward-biased condition and has the dominant effect there. The second capacitance, known as the depletion capacitance, is a weak function of the applied voltage.
A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions
Published in Mathematical and Computer Modelling of Dynamical Systems, 2019
D. Büchl, W. Kemmetmüller, T. Glück, B. Deutschmann, A. Kugi
with the transit time . Inserting (4) into (6) and calculating the derivative with respect to the terminal voltage leads to the diffusion capacitance . This diffusion capacitance is only suitable in the diffusion region , with the threshold . For diode currents , the diffusion capacitance is approximated by the constant capacitance , see [16]. To obtain a continuously differentiable model of the diffusion capacitance for all , the two models for are combined in the form
Speed enhancement techniques for Clock-Delayed Dual Keeper Domino logic style
Published in International Journal of Electronics, 2020
A. Anita Angeline, V.S. Kanchana Bhaaskaran
To elaborate, the conventional domino logic has its keeper circuit being ON during the beginning of the evaluation phase and the drain capacitance CK of the keeper transistor MK is contributed primarily by the following components, namely, 1) the keeper transistor’s gate to drain capacitance CGCD_K = CoxWL/2 and 2) the drain diffusion capacitance of keeper transistor MK specified by the sidewall junction capacitance as where Cdiff is the diffusion capacitance, Cjsw is the sidewall junction capacitance, W is the width of the transistor and Ls is the length of the transistor. On the other hand, in CDDK domino circuit, the capacitance CK1 exerted at dynamic node of MK1 is the gate-to-drain capacitance CGCD_K1 and is equivalent to zero (Palumbo et al., 2012), since the keeper circuit is initially cut-off during the evaluation phase. Also, the drain diffusion capacitance of keeper transistor MK1 is less than that of keeper transistor MK as given by These factors result in reduced net capacitance at the dynamic node while using MK1 – MK2 transistor configuration in CDDK domino. Hence, it can be stated that . Thus, the total dynamic nodal capacitance of CDDK domino circuit is less than the dynamic nodal capacitance of conventional domino logic gate, which speed up the logic transitions at the dynamic node. The total dynamic nodal capacitance of CDDK domino circuit is stated as in Equation (7).
Impact of proton irradiation with different fluences on the characteristics of InP/InGaAs heterostructure
Published in Radiation Effects and Defects in Solids, 2019
Xiaohong Zhao, Hongliang Lu, Yuming Zhang, Yimen Zhang
The forward capacitance increases with increasing voltage. The forward capacitance is composed of diffusion capacitance and trap capacitance. When the forward voltage increases gradually, carriers diffuse reciprocally and traps begin to charge and discharge until all traps participate in charging and discharging effects. As the voltage increases further, the diffusion capacitance rises continuously, and it is proportional to the rate of increase of current with voltage. As a result, the total capacitance increases.