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ESD and EOS: Failure Mechanisms and Reliability
Published in Juin J. Liou, Krzysztof Iniewski, Electrostatic Discharge Protection, 2017
Nathaniel Peachey, Kevin Mello
Oxide failures are generally associated with a charged device model (CDM) event. With the advent of automated assembly of electronic boards, handling of devices by personnel in the factory is no longer a major threat in the modern semiconductor factory. Instead, most ESD failures result from either devices becoming charged in a stray field and then being discharged when they come in contact with a grounded surface or a device contacting a charged surface directly. Current state-of-the-art factory control standards such as ANSI/ESD S20.20 require conductive surfaces to be grounded so that in a factory that is properly controlled, the chances for a device to be damaged by contacting charged, isolated conductors are minimized. Nevertheless, devices continue to face the threat of becoming charged during processing and then being discharged to a grounded conductor. Damaging CDM events most generally are associated with oxide failures within the device. Thus, understanding the oxide failure mechanisms and the latent reliability issues associated with ESD stresses on oxides continues to be a concern.
CAD Tools and Design Kits
Published in John D. Cressler, Measurement and Modeling of Silicon Heterestructure Devices, 2018
The human body model (HBT) is intended to represent a discharge from a person touching one of the package leads. The human body has a large resistance, and the pulse is characterized by a decaying exponential function. The charged device model (CDM) represents a discharge that would be caused by chip or packaging handling equipment. The CDM is a brief discharge, with higher peak current and lower overall energy than that of the HBT and is distributed throughout the chip. The machine model (MM) represents a discharge to a pin by a charged piece of equipment. Current is more localized as in HBM, but peak current is high as in CDM.
Electrostatic Discharge and Electrical Overstress
Published in Michael G. Pecht, Riko Radojcic, Gopal Rao, Guidebook for Managing Silicon Chip Reliability, 2017
Michael G. Pecht, Riko Radojcic, Gopal Rao
There are three models to describe different ESD phenomena that occur in electronic components:The human body model (HBM) that simulates the effects of human interaction with the components. The HBM is represented by a discharge through a series RC circuit with the resistance of 1500 Ω, and the capacitance of 100 pF. A person can, through the triboelectric charge effect build up 1000s of V by simply walking on an insulated surface (e.g., carpet), or using insulated footwear, given the right set of environmental conditions (typically low humidity). The characteristic waveform of the discharge associated with a person coming in electrical contact with a body at some other potential is then modeled by the HBM circuit.The machine model (MM) that describes the effects of charge transference between machines and components. The machine models are intended to model the ESD produced when contact is made between a charged object and an IC during the manufacturing process, at steps such as wire bonding, board assembly, or test. Unlike the human body model, industry does not have a long tradition with the machine model specifications, tests, and cures. Therefore, two specifications originating from Japan and Phillips Research Laboratories are used Generally MM is simulated by a discharge through a RC circuit with the resistance of 0 Ω, and the capacitance of 200 pF.The charged-device model (CDM) that describes the effects of rapid discharge of the charge collected in the device itself. An electronic package can pick up a charge from the triboelectric interaction with, for example, the shipping tubes or marking equipment. When the package is subsequently grounded this collected charge dissipates to ground. Whereas the CDM has not been fully standardized throughout the industry, it is generally simulated by a discharge through a RC circuit with the resistance of 0 Ω, and the capacitance of 0 pF.
The ESD Control Program Handbook
Published in Technometrics, 2022
Chapter 1 introduces several fundamental terminology and provides a big picture with key concepts in ESD control. Chapter 2 presents in more detail the principles of ESD control. Under the overview of ESD control, the author discusses contact charge generation, electrostatic charge build-up based on mathematical models. After that, electrostatic fields/discharges/attraction, electronic models of ESD are outlined. Finally, strategies to avoid ESD damage are presented. Chapter 3 focuses on electrostatic discharge-sensitive (ESDS) devices, which are components that are susceptible to ESD damage. To measure ESD susceptibility, the author suggests a simple electronic circuit to model ESD, and provides several strategies (e.g., human body model, machine model, charged device model) to test susceptibility. Moreover, some detailed items and descriptions of ESD susceptibility of components, types of ESD damage, and system-level ESD are mentioned.