China
Africa
Explore chapters and articles related to this topic
High K Dielectric Films for NVM
Published in Arup Bhattacharyya, Silicon Based Unified Memory Devices and Technology, 2017
Published band diagrams for HfO2, HfSiON, and ZrO2 films against silicon substrate and aluminum or platinum electrodes are shown in Figure 12.25a–d, respectively, for ultra-thin films. Multiple techniques are often employed to obtain the band gap and assumption on effective mass through the dielectric film is made to derive the barrier energy from current density versus field plots at different temperatures. Photo electron emission yield versus photon energy methodology is also often used to determine the band diagram. Additionally, processing techniques and history, film thickness, interface characteristics, etc. all influence the values obtained. It should, therefore, be assumed that the energy values are only approximate. A wide variation in the band gap ranging from 5.7 eV to 7.8 eV for ZrO2 films has been reported by investigators [18,19].
Introduction to Nanosensors
Published in Vinod Kumar Khanna, Nanosensors, 2021
An energy band diagram is a plot of energy of the electrons with respect to distance through the solid (Figure 1.4). It contains two bands: valence and conduction bands. The energy difference between the top of the valence band and bottom of the conduction band is called the forbidden energy gap or bandgap. Energy band diagrams for: (a) conductor; (b) semiconductor; and (c) insulator.
Heterostructure Transistors
Published in M S Shur, R A Suris, Compound Semiconductors 1996, 2020
Recently, Schuermeyer et al. (95, 96) have used photoemission and photoconduction (PEC) studies for the determination of the vertical band diagram. In this paper, this technique is extended to the determination of the lateral energy diagram as well. The PEC measurements are nondestructive and are performed on-wafer. The measurement apparatus has been described before (Schuermeyer 96).
Modeling and Simulation-Based Investigation of 2-D Symmetric Double Gate Dopingless-TFET and Its Circuit Performance for Low-Power Applications
Published in IETE Technical Review, 2022
Monika Sharma, Rakhi Narang, Manoj Saxena, Mridula Gupta
In this paper, the analytical model for electric potential of the DG-DL TFET is presented for the first time. The 2-Dimensional analytical results for electric potential, energy band diagram, and electric field and drain current characteristics are validated using the simulation tool ATLAS, and an excellent match is observed. The ION current obtained in Si-based dopingless TFET is 0.16 µA/µm, IOFF is 0.296 fA/µm and ION/IOFF obtained from the proposed device structure is 5.4 × 108, and the sub-threshold swing is 50.77 mV/decade. Furthermore, DG-DL TFET-based resistive load inverter characteristics are obtained which show the propagation delay of 6.36 ns at VDD = 1.5 V, and 13.85 ns at VDD = 1 V, and DG-DL TFET is further analyzed for realizing the NAND and OR logics by controlling both the gates independently. It provides compact and power efficient logics.
Low-frequency property and vibration reduction design of chiral star-shaped compositive mechanical metamaterials
Published in Mechanics of Advanced Materials and Structures, 2023
Ying Zhang, Liang Wang, Qian Ding, Hongge Han, Jinxin Xu, Hao Yan, Yongtao Sun, Qun Yan, Haoqiang Gao
To calculate the natural frequency of star honeycomb periodic structure by the finite element method, we use COMSOL Multiphysics5.5 simulation software to calculate. First, set Floquet periodic boundary condition in the x and y direction respectively. Next, scan the wave vector k along the path Γ→Χ→Μ→Γ in the first Brillouin zone. Then we can get eigenfrequency and eigenfunction according to the Bloch theorem and elastic wave equation of motion. Finally, the dispersion curve is drawn with wave vector k as the abscissa and eigenfrequency as the ordinate, which is the band diagram of CSCMM. The forbidden bandgap between the dispersion curves in the band diagram is the bandgap of CSCMM.
Multi-objective design and optimization of stretching-dominated plate-based mechanical metamaterials for simultaneous vibration insulation and energy absorption
Published in Mechanics of Advanced Materials and Structures, 2022
Linwei Zhang, Zhonghao Bai, Yafeng Chen
Figure 7(a) illustrates the band structure of S8. It can be observed that there is a wide low-frequency band gap for S8 in the band diagram. Next, we calculate the transmission spectrum using finite cells for cross-validation. The calculated transmission spectrum is widely used as an effective method to verify the effectiveness of the band structure [23, 39, 40], which is also employed in this paper. The transmission loss is given by [23]: where Ures and Uexc are the displacements of response and excitation, respectively.