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Synthesis, Properties, and Applications of Transition Metal Oxide Nanomaterials
Published in Vijay B. Pawade, Paresh H. Salame, Bharat A. Bhanvase, Multifunctional Nanostructured Metal Oxides for Energy Harvesting and Storage Devices, 2020
R. Rakesh Kumar, K. Uday Kumar, D. Haranath
Lee et al. first reported the solution-based preparation of soluble and highly crystalline Tungsten Oxide nanorods [106]. The one-dimensional nanostructure of WOX with a variety of morphologies were synthesized in liquid phase compared to the vapor-phase methods (shown in Figure 1.22). Qin et al. reported the solvothermal method for the production of WOx nanowires and nanorods [107]. In a typical synthesis, tungsten hexachloride (WCl6) was dissolved in ethanol, which acts as a precursor for WOx nanowire/rod growth. Cyclohexanol was added to the precursor solution and transferred to the Teflon autoclave and a solvothermal reaction conducted at 200°C for 6 hours to obtain the WOX nanorods. A similar procedure was followed for WOx nanowire synthesis, except 1-proponal was used instead of cyclohexanol and the reaction time extended to 9 hours.
Nonconjugated Symmetrical Dienes
Published in George B. Butler, Cyclopolymerization and Cyclocopolymerization, 2020
Reaction of tungsten hexachloride with tetraallylsilane gave a product which catalyzed ring opening polymerization of cycloolefins.364 Polyoctadienamers containing 80-90% cis units were obtained in up to 100% yield. Similar catalysts from diallyldimethylsilane and phenyltriallysilane were less effective.
Fabrication of a WO3 Conductometric Activated Thin Film Sensor for Resistance-to-frequency Conversion Based Sensing Application
Published in IETE Journal of Research, 2022
Bikram Biswas, Anup Dey, Subhashis Roy, Subir Kumar Sarkar
For depositing the WO3 thin film on the silicon substrate (P-Si), sol–gel process is used because it is a simple and low-cost technique for deposition [20]. There are different precursors available for depositing the WO3 thin film, such astungsten hexachloride, tungsten alkoxides, colloidal tungsten acid solution, choro alkoxide solution and perox-poly metallic acid. In this research work, WCl6 (Tungsten hexachloride) has been used as a precursor to prepare the WO3 thin film. At first, five gram WCl6 is dipped in 100 ml isopropanol. Then the mixture is placed in dry air (at room temperature) for 45 h. After that, the obtained sol is deposited on the front side surface of p-Si substrate by spin coating and dissociated at 100°C for 10 min. The deposited thin film has a nanostructure as observed in Figure 2.