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Sustainability of the Tire Industry: Through a Material Approach
Published in Neha Kanwar Rawat, Tatiana G. Volova, A. K. Haghi, Applied Biopolymer Technology and Bioplastics, 2021
Sanjit Das, Hirak Satpathi, S. Roopa, Saikat Das Gupta
Silica can be of two types; one is fumed silica and another is precipitated silica. Precipitated silica is most common for rubber and tire industries. Silicon dioxide, also known as silica (from the Latin silex), is a chemical compound that is a dioxide of silicon with the chemical formula SiO2. It has been known since ancient times. Silica is most commonly found in nature as quartz.
Chips with Everything
Published in Sharon Ann Holgate, Understanding Solid State Physics, 2021
The transistor, and almost every other electronic component, is made mainly from semiconductor materials, including silicon (Si), germanium (Ge)—from which many of the first electronic devices were made—and gallium arsenide (GaAs). The most widely used of these is silicon, as many electronic components contain silicon, and almost all integrated circuits are mounted on silicon chips. Silicon occurs naturally as silica (also known as silicon dioxide) in several different forms including quartz and sand. Unlike many of the Earth’s resources, silicon is so abundant that it is unlikely to become used up. This is good news, as the semiconductor industry is one of the biggest industries in the world and more and more high-tech products come on the market each year.
VLSI Scaling and Fabrication
Published in Manoj Kumar Majumder, Vijay Rao Kumbhare, Aditya Japa, Brajesh Kumar Kaushik, Introduction to Microelectronics to Nanoelectronics, 2020
Manoj Kumar Majumder, Vijay Rao Kumbhare, Aditya Japa, Brajesh Kumar Kaushik
In the VLSI industry, most of the fabrication processes utilize quartz glass or oxide that is known as silicon dioxide (SiO2). The SiO2 film can be deposited either by adding impurities or can be grown on top of the wafer. The gate oxide of the MOS transistor is made up of SiO2, which acts as an excellent insulator and is compatible to a silicon wafer with a dielectric constant of 3.9. In order to develop silicon dioxide, silicon is reacted with oxygen in appropriate ambient surroundings. In this process, a thin dielectric film with an average growth rate of approximately 1.5 nm per hour with a thickness of 4.0 nm is produced. There are several CVD processes that can deposit the thin film of silicon dioxide on top of the silicon wafer and can be used in a variety of places at the time of fabrication of CMOS ICs.
Future of photovoltaic materials with emphasis on resource availability, economic geology, criticality, and market size/growth
Published in CIM Journal, 2023
G. J. Simandl, S. Paradis, L. Simandl
Silicon is a nonmetallic element in Group 14 (carbon family) of the periodic table with atomic number 14. It is the second most abundant element in the earth’s crust by weight (31.14%) after oxygen (Rudnick & Gao, 2014). It can be found in a wide variety of minerals and elemental compounds. Silicon dioxide (SiO2) or silica is one of the most common compounds, forming all quartz polymorphs and varieties, agate, opal, and chert. Quartz is one of the main rock-forming minerals and the main constituent in high-purity sand, sandstone, and quartzite. It is commonly the main constituent of cores of pegmatites and mineralized or barren hydrothermal veins. Silica materials are available on all continents and satisfactory for most common applications, including ferrosilicon and metallurgical-grade silicon (MG-Si). However, in most cases, the silica content of these rocks is too low and the impurities content is too high for direct transformation to solar- or electronic-grade Si.
Protecting human health and the environment against siloxanes: The role and effectiveness of wastewater treatment technologies
Published in Critical Reviews in Environmental Science and Technology, 2023
Andres E. Ortiz-Ardila, Juan D. Restrepo, Largus T. Angenent, Joseph G. Usack, Rodrigo A. Labatut
Moreover, these VOSiCs have become particularly problematic for wastewater treatment plants (WWTPs), where they contaminate biogas at trace levels (VOSiC ≈ 1%) (Kadam & Panwar, 2017). Octamethylcyclotetrasiloxane (D4) and decamethylcyclopentasiloxane (D5) are the most common forms of VOSiCs in biogas (Santos-Clotas et al., 2019; Wang & Alaee, 2018), whose concentrations range from 2 to 317 mg · m−3. Even at such small concentrations, these VOSiCs cause severe and irreversible damage to biogas combustion systems throughout time due to the formation of silicate deposits on the internal surfaces of the static and moving machinery (Gao et al., 2017). Moreover, these silicates can damage the steam reforming system, resulting in silicon dioxide (SiO2) particle emissions to the atmosphere that, among other effects (Anh et al., 2021), cause silicosis disease in humans (Sun et al., 2015).
Effects of composition ratio on structure and phase transition of ferroelectric nanocomposites from silicon dioxide nanoparticles and triglycine sulfate
Published in Phase Transitions, 2019
Bich Dung Mai, Hoai Thuong Nguyen, Thi Kim Anh Nguyen, Dinh Hien Ta, Thi Nhan Luu
If silicon is known as a semiconductor at the heart of modern electronics, silicon dioxide (SiO2) takes part in electronics technology in the role of insulating material. In the area of nanoelectronics, SiO2 is commonly used in the form of nanoparticles, especially, as a reinforcing component for synthesizing advanced materials with several promising properties meeting the strict requirements in manufacturing industry for more compact, thinner and lighter high-performance appliances. Nanocomposites are such materials [1–5]. In these nanocomposites, SiO2 nanoparticles play the role of not only a reinforcing material, but also an important factor for adjusting composite properties through the interaction of SiO2 with fillers owing to its large specific area and hydrophilicity [5].