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Thin Films for Electronic, Spintronics, and Optical Applications
Published in Fredrick Madaraka Mwema, Tien-Chien Jen, Lin Zhu, Thin Film Coatings, 2022
Fredrick Madaraka Mwema, Tien-Chien Jen, Lin Zhu
Thin metal oxide coatings in the range of few nanometres have varied characteristics when subjected to electromagnetic radiation. These characteristics are determined by the interaction of the oxide with the light beams. The most common oxides that have been used in the market are silicon oxide and titanium dioxide. Other additional oxides like niobium oxide, aluminium oxide, and tantalum oxide combine to form multiple coating layers for anti-reflective surfaces. These oxides have different optical properties; for example, niobium penta-oxide (Nb2O5) thin films exhibit higher refractive index than tantalum oxide (Ta2O5) and they are transparent in the wavelength range from 380 nm to 9 μm [7]. This is due to their transparency in wide range of wavelengths and high refractive index. Multiple layers are preferred in optical application because a single layer coating can be effective in a narrow range. The thickness of the coating layers should be equal to a quarter of the wavelength of the fraction of the electromagnetic spectrum wavelength [8]. Transparent conductive oxides such as indium oxide are employed in manufacture of display systems. Indium oxide transmits power across liquid crystal displays. The use and development of these films have enhanced the size of display systems.
Metal Oxides and Hydroxides: Their Relevance to Vapor Transport in Severe Reactor Accidents
Published in J. T. Rogers, Fission Product Transport Processes in Reactor Accidents, 2020
Ian R. Beattie, Peter J. Jones, Brian R. Bowsher, Alan L. Nichols, Paul E. Potter, Malcolm H. Rand
The indium metal was supplied by Aldrich (99.999% purity) and used without further treatment, while the water was distilled and degassed; both the helium and hydrogen were research grade (British Oxygen Company), and the carbon monoxide and carbon dioxide were technical grade (The Distillers Company). Problems were encountered with impurities in the helium gas supply, and 99.999% purity material was used in the later experiments. Hydrated indium oxide was obtained by dissolving indium metal in concentrated hydrochloric acid, diluting, precipitating the indium hydroxide with ammonia, and then centrifuging and washing repeatedly with water until the washings were free of chloride; the resulting white deposit was dried in an oven at 150°C for 24 h, and an infrared spectrum of the product was in good agreement with a reference spectrum. Indium oxide (In2O3) was obtained by heating the hydrate to 800°C according to the method of Stubbs et al (17).
First Principles Calculations in Exploring the Magnetism of Oxide-Based DMS
Published in Jiabao Yi, Sean Li, Functional Materials and Electronics, 2018
Indium oxide (In2O3) is another well-known transparent oxide semiconductor with a wide direct band-gap (3.75 eV [81]). The crystalline form of In2O3 is a cubic structure as shown in Figure 7.9, with experimental lattice constant equal to 10.117 ± 0.001 A [82]. It is a high symmetry structure with In3+ at a six-folds coordinated position and O2- occupying a fourfold coordinated position. This structure is rather complicated and quite different from the other oxide-based DMS hosts. However, In2O3 with the cubic structure can be ideal for industrial applications since high crystallinity samples can grow easily on low-cost substrates like MgO [83]. It is reported that pristine In2O3 in both bulk crystal and thin film forms have shown a high level of n-type conductivity (1018-1020 carriers cm−3). Moreover, when Sn substitutes In atoms, we can obtain the indium tin oxide (ITO), which is one of the most commonly used transparent semiconductors.
Molybdenum and its oxide-based coatings: a review
Published in International Journal of Ambient Energy, 2022
Kamlesh V. Chauhan, Akshay L. Sonera, Divyeshkumar P. Dave, Hitesh Panchal
Transparent conducting oxide thin films have their most importance and usefulness in the thin film of photovoltaics, good windows, organic LED and also in the flat panel display. Elangovan et al. (2007) conducted investigation on Mo-doped indium oxide films. These thin films were prepared by means of physical vapour deposition techniques as RF magnetron sputtering at a standard temperature. Here the films were studied as a function of oxygen volume unit starting from 3.5 to 17.5. The experiment uses a mixture of glass substrate and planner target of In2O3 (95 wt%):Mo (5 wt%), the base pressure on 6.5 × 10−4 Pa, the gas pressure includes O2 pressure 1.1–3.4 × 10−2 Pa and Ar pressure as 1.3–3.2 × 10−1 Pa, the deposition pressure was kept at 1.0 Pa. The results of the experiments were given as they determined that the films deposited without O2 show poor transmittance and therefore the annealing of the film will increase bandgap from 3.83–3.90 to 3.85–3.98 eV.
Design and Development of Instrumentation for Remote Detection of Hydrogen Using Metal Oxide Sensor
Published in IETE Technical Review, 2022
Ajay Kumar Keshari, J. Prabhakar Rao, A. Sree Rama Murthy, V. Jayaraman
The hardware and software were calibrated with different standard resistances ranging between 10 and 100 kΩ. The In2O3 (indium oxide) sensor was loaded in the sensor housing. The sensor was connected to the instrument for the measurement of sensor response. The sensor heater was connected to a programmable power supply to heat the sensor. The instrument was connected to the PC through the LAN for collecting the resistance of the sensor. The experiments were conducted at 25 ppm concentration of hydrogen at different temperatures range from 548 to 623 K to get the optimized temperature by measuring sensitivity. The sensor operating temperature was optimized at 598 K to get the maximum sensitivity. The experiment was conducted with different concentrations of hydrogen from 25 to 60 ppm. After attaining a steady response due to hydrogen injection, the chamber valve was left open for natural diffusion of air to replenish fresh ambience in the chamber. No carrier gas was used in the experiments.
One-step growth of thin film SnS with large grains using MOCVD
Published in Science and Technology of Advanced Materials, 2018
Andrew J. Clayton, Cecile M. E. Charbonneau, Wing C. Tsoi, Peter J. Siderfin, Stuart J. C. Irvine
Tin-doped indium oxide (ITO) was used as the substrate as an alternative to molybdenum (Mo). Molybdenum disulphide (MoS2) forms at the SnS/Mo interface and can inhibit the photovoltaic (PV) properties of a device if the thickness becomes significant [8,9]. The authors favoured ITO, having a similar work function to Mo [10–13] to give an ohmic back contact, to avoid MoS2 formation. As ITO is transparent it also creates the possibility for bifacial illumination, with carriers generated from photons entering the device from the front and back. This report discusses the materials properties of SnS films produced using this approach.