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Carbon Nanotubes and Their Device Applications
Published in Khurshed Ahmad Shah, Farooq Ahmad Khanday, Nanoscale Electronic Devices and Their Applications, 2020
Khurshed Ahmad Shah, Farooq Ahmad Khanday
A carbon nanotube field-effect transistor (CNTFET) is a type of FET that utilizes a single CNT or number of CNTs as the channel medium. With the use of a semiconducting SWCNT, a FET has been built with prominent effects due to modulation of gate parameters. One of the first electronic nanodevices manufactured using CNT was the normal FET with a backgate. The design used at that time is still the basic step for almost all CNT-based nanodevices. The common CNTFET device design consists of a CNT lying on the top of two electrodes which are placed on the dielectric surface with a back gate. In newer designs of CNTFET, the electrodes are placed on top of the CNTs to improve contact stability with the same type of back gate used. The developments are going on to increase gate efficiency by using different techniques of attaching gates with the CNT channel. One of the methods include using topgate, in which gate is evaporated on top of the device.
Design of Ternary Logic Circuits Using CNFETs
Published in Brajesh Kumar Kaushik, Nanoscale Devices, 2018
Chetan Vudadha, M. B. Srinivas
CNFET is a transistor that makes use of semiconducting carbon nanotubes as channel material between two metal electrodes that act as source and drain contacts. The operating principle of CNFET is similar to that of MOS transistors. As shown in Figure 11.2, this three- (or four-) terminal device consists of a semiconducting nanotube, acting as conducting channel, bridging the source and drain contacts. The device is turned on or off electrostatically via the gate. The drain current is directly proportional to the number of CNTs connected between the source and the drain and their respective diameters [44,45].
Design of CNTFET-based Current-mode Multi-input m:3 (4 ≤ m ≤ 7) Counters
Published in IETE Journal of Research, 2021
Mohammad Hassan Bagheri, Mehdi Bagherizadeh, Mona Moradi, Mohammad Hossein Moaiyeri
Traditionally, the current-mode circuits are implemented by either bipolar (bipolar CML) or MOS (MCML) devices. MCML is preferred for mixed analog-digital signal environments due to high power consumption of bipolar transistors and higher supply noise immunity of MOS devices [6]. Although the latter has been the superior technology for implementing energy-efficient circuits for many years, their suitability in the near future nanometer VLSI technologies is gradually disappearing. This mainly originates from of several critical challenges of MOS devices in nanoranges such as very high leakage currents, high power density, large parametric variations and decreased gate control [8]. To overcome these problems, carbon nanotube field effect transistor (CNTFET) has been considered as a promising substitution to the MOSFET technology in the near future.
A high-performance 5-to-2 compressor cell based on carbon nanotube FETs
Published in International Journal of Electronics, 2019
Mehdi Bagherizadeh, Mohammad Hossein Moaiyeri, Mohammad Eshghi
On the other hand, scaling the feature size of the complementary metal-oxide semiconductor (CMOS) technology leads to a variety of critical challenges including gate control reduction, high leakage power dissipation and short-channel effects (Moaiyeri, Faghih Mirzaee, Navi, Nikoubin, & Kavehei, 2010; Zareei, Navi, & Keshavarziyan, 2018). Many nanoscale emerging technologies have been suggested to replace the current technologies. However, among these nanodevices, carbon nanotube field effect transistor (CNFET) is considered as the most feasible alternative for replacing the Si-MOSFET technology in the near future because of its unique physical structure and electrical behavior. CNFET has higher efficiency in terms of power consumption, speed, working frequency and low-voltage operation. In addition, desired threshold voltage can be attained for a CNFET by adopting proper diameter of its Carbon Nanotubes(CNTs) in the channel region (Mehrabani & Eshghi, 2016).