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Film Deposition: Dielectric, Polysilicon and Metallization
Published in Kumar Shubham, Ankaj Gupta, Integrated Circuit Fabrication, 2021
Fabricating IC requires different kinds of thin films which can be classified into five groups: a) epitaxy layers, b) thermal oxides c) dielectric layers d) polycrystalline silicon e) metal films. The growth of epitaxial layer and thermal oxides were discussed in chapter 2 and chapter 3 respectively. Dielectric layers such as Silicon dioxide (SiO2) and silicon nitride (Si3N4) are used for insulation between conducting layers as masks for diffusion and ion implantation, for covering doped films to prevent the loss of dopants as well as for passivation to protect devices from impurities, moisture, and scratches. Phosphorus-doped silicon dioxide, commonly referred to as P-glass or phosphosilicate glass (PSG), is especially useful as a passivation layer because it inhibits the diffusion of impurities (such as Na), and it softens and flows at 950°C to 1100°C to create a smooth topography that is beneficial for depositing metals. Borophosphosilicate glass (BPSG), formed by incorporating both boron and phosphorus into the glass, flows at even lower temperatures between 850°C and 950°C. The smaller phosphorus content in BPSG reduces the severity of aluminum corrosion in the presence of moisture. Si3N4 is a barrier to Na diffusion, is nearly impervious to moisture, and has a low oxidation rate. The local oxidation of silicon (LOCOS) process also uses Si3N4 as a mask. The patterned Si3N4 will prevent the underlying silicon from oxidation but leave the exposed silicon to be oxidized. Si3N4 is also used as the dielectric for DRAM MOS capacitors when it combines with SiO2.
Mechanical adhesion of SiO2 thin films onto polymeric substrates
Published in Surface Engineering, 2018
C. Ho, J. Alexis, O. Dalverny, Y. Balcaen, A. Dehoux, S. Châtel, B. Faure
The total number of buckles measured on three different samples per configuration is, respectively, 9, 31 and 23 for sample type A, B and C. Width and height of buckles are measured at a strain before degradation of buckles, that is a strain of 4.5% for sample A, 3.3% for sample B and 4.9% for sample C. Calculated energy release rates using Hutchinson and Suo model range from 0.1 to 1 J m−2 for SiO2 Type A, 1.5 to 3.5 J m−2 for SiO2 Type B and from 1.7 to 3 J m−2 for SiO2 Type C , which is in the same order of magnitude as adhesion energies found in the literature; for example, 1.9 to 2.7 J m−2 for Tungsten-Titanium (WTi) film on borophosphosilicate glass (BPSG) substrates or 4.3 to 6.3 J m−2 for ITO layers on Hard coat on Acrylite substrate [21,22].