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Current Materials Used for Neutron Detection
Published in Alan Owens, Semiconductor Radiation Detectors, 2019
Icosahedral boron arsenide, B12As2, has attracted attention as a material for both neutron detection and energy generation in radioisotope batteries [65]. For neutron detection it has several advantages over other boron-rich compounds. For example, apart from the high boron content, hole mobilities are reported to be relatively high (of the order of 50–100 cm2 s-1 V-1), which when coupled with its wide bandgap of 3.2 eV (and potentially low leakage currents) should result in efficient neutron detection, particularly if synthesized from enhanced 10B boron. The interest in using B12As2 for radioisotope battery applications is driven by the fact that it is a refractory material, mechanically hard (with a microhardness similar to boron nitride) with a very high melting point. More significantly, it is intrinsically radiation hard with the unique ability to “self-heal”. Specifically, in a study of irradiated boron-rich solids, Carrard et al. [66] and Emin [67] found no evidence of defect clusters or amorphorization in B12As2 following heavy doses of ionizing radiation. They concluded that radiation-induced atomic vacancies and interstitials spontaneously recombine as a direct consequence of the unusual structural and electronic stability of boron icosahedra – even when in a degraded state.
Characterization of Nanoscale Thermal Conductivity
Published in Klaus D. Sattler, 21st Century Nanoscience – A Handbook, 2020
Weidong Liu, Liangchi Zhang, Alireza Moridi, Mohammad Ehsan Khaled
The ultra-fast temperature excursion (Ȉ100 fs) and very shallow heat penetration depth (Ȉ 100 nm) are the primary advantages of TDTR method. Hence, the TDTR method enables the thermal conductivity characterization of high thermal conductivity and extremely thin materials (Cahill, 2018). For example, TDTR method has been successfully applied in the search of a cubic boron arsenide material with an ultra-high thermal conductivity of 1000 ± 90 W/(m·K), surpassed only by diamond and the basal-plane value of graphite (Li et al., 2018). TDTR method has also been applied to characterizing the thermal conductivity of aligned liquid crystal networks (Shin et al., 2016) and amorphous polymers (Xie et al., 2016).
Binary IV-IV and III-V Semiconductors
Published in Lev I. Berger, Semiconductor Materials, 2020
Boron arsenide is stable when heated in arsenic vapors; it is resistive to corrosion4.68 and can be synthesized from the mixture of boron and arsenic in evacuated and sealed fused silica ampules held at 1073 K during periods of time from 12 to 50 hr.
Simulation design for thermal model from various materials in electronic devices: A review
Published in Numerical Heat Transfer, Part A: Applications, 2022
Raihana Bahru, Mohd Faiz Muaz Ahmad Zamri, Abd Halim Shamsuddin, Mohd Ambri Mohamed
The thermal boundary conductance (TBC) of materials is a practical guide for determining the materials that have intimate contact atomically. Monachon et al. [64] reviewed on materials aspect of analytical and computational measurement for TBC. They agreed that materials science strongly influences TBC performance, including bulk dispersion relations, acoustic contrast, interfacial chemistry and bonding. Wei et al. studied the TBC for boron arsenide (BAs) and silicon (Si) using nonequilibrium molecular dynamic (NEMD) simulation in application light emitting diode (LED). They found that the TBC of the Bas/Si interface has high TBC even in major frequency mismatch in the thermal conductivity accumulation. The high TBC of BAs and SI interface due to the overlap of phonon density in the frequency range of 5–8 THz. From this trend, the TBC was not sensitive to the temperature increment with the range prediction measurement between 200 and 300 MW/m2.K in the temperature range of 300–700 K [65].
Geometrical optimization of boron arsenide inserts embedded in a heat spreader to improve its cooling performance for three dimensional integrated circuits
Published in Numerical Heat Transfer, Part A: Applications, 2021
Andisheh Tavakoli, Mohammad Reza Salimpour, Kambiz Vafai
Maximum dimensionless temperature is where, is the maximum temperature of the 3-D IC structure with heat spreader having high conductivity inserts. In fact, this dimensionless parameter presents the effectiveness of utilizing boron arsenide HCI in cooling the 3-D IC. It is notable that is always less than unity.