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Short Review of Atomic and Semiconductor Theory
Published in Vijay B. Pawade, Sanjay J. Dhoble, Phosphors for Energy Saving and Conversion Technology, 2018
Vijay B. Pawade, Sanjay J. Dhoble
As discussed in Section 1.2.5.2, doping is an important term in semiconductor materials, which introduces impurities into a pure intrinsic semiconductor to modify the related properties of the materials. If the semiconductor is lightly doped, it acts as an extrinsic semiconductor, whereas if the semiconductor is heavily doped like a conductor, it is called a degenerate semiconductor.
Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET
Published in IETE Journal of Research, 2023
Rajesh Saha, Deepak Kumar Panda, Rupam Goswami
We have extracted the electrical parameters of SiGe pocket Vertical TFET through the TCAD simulator [23]. The doping-dependent Masetti model is incorporated to study the effect of doping on the mobility of the charge carriers. The Fermi Dirac distribution and bandgap narrowing models are incorporated due to the degenerate semiconductor (p+ source and n+ drain) in the SiGe pocket n-TFET. The recombination effect is realized through the SRH model in the simulator. The transport of the charge carriers in the proposed device is activated through a non-local BTBT model in the simulator. Before the simulation, we calibrated the TCAD models with experimental data available in the literature. In this regard, we changed various parameters of the non-local BTBT model: Apath = 3.29 × 1015 cm−3s−1, Bpath = 23.8 × 106 Vcm−1 for Silicon and Apath = 1.67 × 1015 cm−3s−1, Bpath = 6.55 × 106 Vcm−1 for Germanium [24]. A better matching is perceived between the simulated and the experimental data as portrayed in Figure 2.
Realizing p-type NbCoSn half-Heusler compounds with enhanced thermoelectric performance via Sc substitution
Published in Science and Technology of Advanced Materials, 2020
Ruijuan Yan, Wenjie Xie, Benjamin Balke, Guoxing Chen, Anke Weidenkaff
The temperature dependence of Seebeck coefficient (S) in Nb1-zSczCoSn is shown in Figure 6(a). The value of S for unsubstituted NbCoSn is −185 μV/K at room temperature, showing that NbCoSn is apparently an n-type semiconductor. With Sc content increasing, the S of Nb1-zSczCoSn changes gradually from negative to positive with increasing of Sc content, which matches very well with the Hall measurements. The peak value of S reaches ~306 μV/K at 850 K for the Nb0.95Sc0.05CoSn sample, and it is much higher than that (150 μV/K) of Nb0.8Zr0.2CoSn. The single parabolic band (SPB) model is usually used to analyze the transport properties of half-Heusler compounds [46]. Assuming electron conduction occurs within an SPB, the Seebeck coefficient of a non-degenerate semiconductor is related to the effective mass m*, carrier concentration pH and scattering parameter λ via
An analysis of phonon emission as controlled by the combined interaction with the acoustic and piezoelectric phonons in a degenerate III–V compound semiconductor using an approximated Fermi–Dirac distribution at low lattice temperatures
Published in Philosophical Magazine, 2018
A. Basu, B. Das, T. R. Middya, D. P. Bhattacharya
There are a number of devices like infrared detectors, galvanomagnetic devices, light emitting diodes etc. which make use of the piezoelectric semiconductors [2]. The importance of the piezoelectric interaction relative to that of the deformation potential scattering of electrons in controlling the ohmic transport characteristics in non-degenerate compound semiconductors has already been studied [3,8,9]. The purpose of the present communication is to make an analysis of the effects of piezoelectric interaction of the non-equilibrium electrons on the phonon growth characteristics in a degenerate (deg.) compound semiconductor under the condition of low lattice temperature. The analysis uses the same model distribution function of the non-equilibrium electrons, as that used in [7,10] and takes due account of the inelasticity of the electron-phonon collisions and of the true phonon distribution. The similar analysis for a non-degenerate semiconductor is also added here as a special case. Numerical results are obtained for InSb. The results clearly demonstrate the importance of the piezoelectric scattering in determining the phonon growth characteristics under the condition of low lattice temperature.