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CMOS Manufacturability
Published in Krzysztof Iniewski, Circuits at the Nanoscale, 2018
For analog/RF applications, device sensitivity to the parasitic resistance, capacitance (and recently, also inductance) is becoming a higher priority for layout techniques as compared to footprint reduction or pattern fidelity. As an example, Figure 2.2 shows three inverter layouts designed to be identical from the DC parametric standpoint [27]. However, one can expect that their frequency responses would be significantly different. While by changing the layout from 2a to 2b (area increase by ~ 130%), one trades the die footprint for lithography yield on the one hand, and for point defect yield on the other, the layout 2c (75% bigger than 2a), which trades line CD uniformity for the immunity to optical proximity, should be preferred for RF applications due to the lower parasitics of folded gates. On the other hand, CBC layout optimization requires significant precharacterization effort, for example, by test chips, to model parasitic effects.
Impact of temperature on 14 nm FINFET with high-K different oxide material
Published in Rajesh Singh, Anita Gehlot, Intelligent Circuits and Systems, 2021
Shekhar Verma, Suman Lata Tripathi
By changing the drain gate voltage from 0 to 1 volt with the step of 0.05 volt and keeping the constant value of 1 volt at drain source voltage, we oberved the performance of the device on both the oxide materials, high-K and low-K. As per Figure 30.2, drain current value is higher in comparison to the low-K oxide material. As the temperature increases from 200 K to 350 K, the saturation current of the devices increases as per Figure 30.3(a,b) due to lowering in the parasitic resistance. This resistance increases due to increasing in concentration of the minor charge as the temperatures rises from 200 K to 350 K. In the proposed design 350 K gave the highest saturation current and 200 K the lowest current value.
CIRCUIT FORMULATION AND COMPUTER SIMULATION
Published in Wenquan Sui, Time-Domain Computer Analysis of Nonlinear Hybrid Systems, 2018
Like the high-frequency diode model, some nonlinear capacitors are added into the basic Eders-Moll model in parallel to the two diodes, at high frequency range, and so are bulk resistors at each junction. Therefore, the general EdersMoll model in the high frequency range can be modified from the basic one; it is shown in Figure 6-16. The components inside the dashed box comprise the low-frequency EdersMoll BJT model. The extra resistors and capacitors are all branch-voltage dependent. Applications of KCL at any node would generate general equations having the forms in (6.55). In real device modeling, more components are included in the model to account for other effects, such as the parasitic resistance and capacitance. C RC
A non-cascading DC/DC quadratic boost converter with high voltage gain for PV applications
Published in International Journal of Electronics, 2022
P.L. Santosh Kumar Reddy, Y.P. Obulesu
Power losses in the converter are caused by the parasitic resistance of components. In real-time applications, the power losses of switches, diodes, inductors, and capacitors are required to evaluate the converter performance.