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2-Based High-κ Dielectrics for Use in MEMS Applications
Published in Vikas Choudhary, Krzysztof Iniewski, MEMS, 2017
Bing Miao, Rajat Mahapatra, Nick Wright, Alton Horsfall
The invention of the integrated circuit, continuous reduction in the charge required for logic operations, and storage have resulted in a steady increase in the density of logic gates and memory cells on a single chip. The scaling trend of an integrated circuit, as described by G. E. Moore in 1975, is that on-chip logic density has doubled about every 24 months for decades [1]. The semiconductor industry accepted this trend as a roadmap and pursuit a decrease in the total area of chips in a system for a given amount of system functionality continuously. However, passive devices (inductors, resistors, and capacitors) for these applications have not shrunk in size as rapidly as active devices because of their impedance levels and signal path properties, and an increasing number of passive devices are required in modern wireless applications where the larger fraction of analog signals were involved [2]. Therefore, thin-film integrated passive devices are an alternative to discrete passive devices in an effort to save board space and to improve electrical performance and system reliability.
The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration
Published in Science and Technology of Advanced Materials, 2023
Kirill Kamnev, Zdenek Pytlicek, Maria Bendova, Jan Prasek, Francesc Gispert-Guirado, Eduard Llobet, Alexander Mozalev
Modern portable electronic devices (PEDs) such as smart wearable gadgets, personal digital assistants, multi-media and biomedical appliances, various automotive and aerospace devices, or unmanned aerial vehicles still consist of many discrete passive components: resistors (R), inductors (L), capacitors (C), or modules [1,2]. Those components may occupy up to 40% of the surface of a second-level package substrate, such as a printed circuit board (PCB) or a multichip module (MCM) [3]. To reduce the number of discrete passives and make PEDs substantially smaller and lighter, the concept of Integrated Passive Devices (IPDs) has been implemented [3–5]. In this concept, all R, C, and L components, interconnection, or their combinations are integrated into a single layer or incorporated in a multilayer structure assembled on top of a bare chip or a substrate with active integrated circuits (PCB, MCM, hybrid integrated circuits, or chiplet modules) [6–8]. IPDs can potentially fully substitute discrete-components-based solutions such as through-hole or surface-mount devices. The miniaturization of PEDs using IPDs improves the precision of passives, shortens and narrows interconnections, and contributes to smaller tolerances of elements’ characteristics, thus making IPDs especially attractive for impedance matching, filtering, and coupling/decoupling circuits [6,7,9]. IPDs are also actively used in designs with high input/output pin count for achieving electromagnetic interference (EMI) filtering or electrostatic discharge (ESD) suppression [10].