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pn Junction and Semiconductor Diodes
Published in Nassir H. Sabah, Electronics, 2017
The discussion then shifts to some special types of semiconductor diodes. The electrical properties of a pn junction can be altered through irradiation by light, as in photodiodes and photocells. The reverse process of light emission by a pn junction occurs in light-emitting diodes (LEDs). The current–voltage characteristic of the tunnel diode has an unusual negative resistance part that is useful for some applications. Metal–semiconductor contacts are not only unavoidable in semiconductor devices, but are also the main structure in some special-purpose diodes and transistors. The chapter ends with a discussion of the hetero-junction, which is an important development that enhances the performance of the bipolar junction transistor.
Master-slave synchronization of neural networks with time-varying delays via the event-triggered control
Published in Mathematical and Computer Modelling of Dynamical Systems, 2020
Jun Zhou, Dongbing Tong, Qiaoyu Chen, Wuneng Zhou
Example 4.2. According to [20], the dynamic equation of a tunnel diode circuit can be written as Equations (26) and (27). In Figure 7, the voltage is an external input. and represent the resistance. and are the inductance and the capacitor, respectively. is the current flowing through resistance . is the voltage at both ends of tunnel diode, and represents the current flowing through the tunnel diode. Inspired by [20], it can get a dynamic equation as
A tracking microwave wideband band reject filter using antiphase locking
Published in International Journal of Electronics Letters, 2018
Santosh Kumar Dawn, Taraprasad Chattopadhyay
Depending upon the nature of components used in the design, BRFs can be divided into two categories, viz. passive BRF and active BRF. Passive BRFs (Chattopadhyay & Bhattacharyya, 2014; Chattopadhyay, Bhattacharyya, Majumder, & Mondal, 2014; Chattopadhyay & Chattopadhyay, 2004; Snyder, 2012) use passive components like inductance, capacitance, stubs, microstrip lines etc. in their design. Active BRFs (Arnold & Marsh, 1993; Kapilevich, 1997, 1996; Snyder, 2012; Sun, Lobato-Morales, Corona-Chevaz, & Itoh, 2012) use one or more active negative resistance devices such as Gunn diode, IMPATT diode, tunnel diode, GaAs FETs, HEMTs, BJTs etc. in their design. Passive microwave BRFs are limited in performance by the high insertion loss and the frequency bandwidth. There exists some trade-off between the two. As the insertion loss increases, the rejection band decreases and vice-versa.
Adaptive event-triggered dynamic output feedback H ∞ control for networked T-S fuzzy systems
Published in Systems Science & Control Engineering, 2021
Consider a tunnel diode circuit system as shown in Figure 2, which is modelled as follows: Letting and , the circuit system can be expressed by the following differential state equation where is the measurement output, is the controlled output, is the disturbance input. Given , the above can be rewritten as Under the assumption , the circuit system can be modeled by the following T-S fuzzy systems where Define the membership functions of the system as The controller's membership functions are chosen as Letting , , , , and (ET threshold in Ran et al., 2018), the minimum value of γ is given in Table 1 under different methods. It is easy to see from Table 1 that the smaller γ are obtained by using improved Wirtinger inequality or Theorem 3.2.