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Spin-Transfer Torque RAM
Published in Hai Li, Yiran Chen, Nonvolatile Memory Design, 2017
A diagram of an STT-RAM cell layout is shown in Figure 3.8(d). Along the x-axis, two metal tracks are reserved for the BL and SL, respectively, in each cell. Shallow trench isolation (STI) is needed to separate two adjacent transistors. Two adjacent STT-RAM cells in the same column can share the source of NMOS transistors. In an ideal situation, the width of metal/diffusion/STI uses the minimal feature size (F), an STT-RAM design achieves the smallest area of 9F2.
Compact Models for Small Geometry MOSFETs
Published in Samar K. Saha, Compact Models for Integrated Circuit Design, 2018
In addition to channel length effect on Vth, narrow channel widths also affect Vth. These effects can be understood physically with reference to local oxidation of silicon (LOCOS) isolation process in CMOS technology as shown in Figure 5.7. LOCOS isolation process has been used prior to shallow trench isolation (STI) techniques used in advanced CMOS technology.
Shallow Trench Isolation CMP
Published in Ungyu Paik, Jea-Gun Park, Nanoparticle Engineering for Chemical-Mechanical Planarization, 2019
Shallow trench isolation (STI) is a relatively new technique that is replacing local oxidation of silicon (LOCOS) for the manufacture of 64 MB semiconductor devices with a linewidth below 0.25 μm. Figure 3.1 shows the STI CMP process.
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
Published in Radiation Effects and Defects in Solids, 2021
Ruiqin Zhang, Qiwen Zheng, Wu Lu, Jiangwei Cui, Yudong Li, Qi Guo
A schematic cross-section of UTBB FD-SOI PMOSFET studied in this work is illustrated in Figure 1. The front gate was fabricated by high-k dielectric/metal technology, and the isolation technology applied in all samples is the shallow trench isolation (STI). In addition, the top silicon film and BOX thickness are 6 and 20 nm, respectively. Based on these process parameters, the capacitance per unit area of buried oxide (Cox) can be calculated as 1.73 × 10−8 F/cm2. Table 1 provides the geometries of various tested devices. For comparison, this work chooses the transistors to own the unified channel length (20 nm) but different W/L conditions (11, 22, 25). The biases applied to the front gate, source, drain and back gate terminals are referrd to as VG, VS, VD, VB, respectively. Moreover, the UTBB FD-SOI PMOSFETs tested are all under OFF bias (VG = VS = VDD), which is the worst bias condition in studied devices under TID irradiation according to our previous study (9). All the devices are mounted in 28-pin dual-in-line packages, and the nominal voltage (VDD) is 0.8 V.
Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation
Published in Radiation Effects and Defects in Solids, 2019
Jinghao Zhao, Hang Zhou, Jiangwei Cui, Qiwen Zheng, Ying Wei, Shanxue Xi, Xuefeng Yu, Qi Guo
As shown in Figure 2(a), we observed no significant change in off state leakage current and threshold voltage shift in RH H-gate devices’ front gate transfer characteristics curves after irradiation for avoiding the effect of shallow trench isolation (STI), in which oxide-trapped charge would be induced under TID radiation. Compared to the obvious VT shift in strip-shaped gate devices after irradiation (Figure 2(b)), the RH process has led to effective radiation resistance to TID effect on the front gate.
A general tool-based multi-product model for high-mixed production in semiconductor manufacturing
Published in International Journal of Production Research, 2023
Liang Chen, Liuxing Chu, Cuicui Ge, Yueyuan Zhang
There are different kinds of technologies used in the CMP process. In this industrial case, it mainly concerns the grinding object of 28 nm, which includes three planarisation applications, i.e. shallow trench isolation (STI)-CMP, inter-level dielectric (ILD)-CMP/inter-metal dielectric (IMD)-CMP and ILD-CMP. The key indicators of CMP include process consistency, production efficiency and reliability. The main inspection parameters of CMP include grinding rate, grinding uniformity and defect quantity.