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Magnetic Domain Walls for Memory and Logic Applications
Published in Sam Zhang, Dongliang Zhao, Advances in Magnetic Materials, 2017
Chandrasekhar Murapaka, Indra Purnama, Wen Siang Lew
For the Rashba effect, it is induced by the electric field gradient due to a symmetry breaking at the surface between the ferromagnetic material and the spin–orbit metal. The torque from the Rashba effect can be written as () HSHE=−γαRJPμBMs(M×σ)
Electric Properties of Organic–Inorganic Halide Perovskites and Their Role in the Working Principles of Perovskite-Based Solar Devices
Published in Giacomo Giorgi, Koichi Yamashita, Theoretical Modeling of Organohalide Perovskites for Photovoltaic Applications, 2017
Claudio Quarti, Domenico Di Sante, Liang Z. Tan, Edoardo Mosconi, Giulia Grancini, Alessandro Stroppa, Paolo Barone, Filippo De Angelis, Silvia Picozzi, Andrew M. Rappe
The possibility to control electron spins by means of external handles, such as electric fields, represents one of the grand challenges in modern electronics. The Rashba effect, relying on the combination of the lack of inversion symmetry and spin-orbit coupling, is currently seen as a promising way to achieve spin manipulation. Of particular relevance is the recent proposal of coupling the Rashba effect with ferroelectricity: the control over Rashba spin splitting in the electronic structure of ferroelectric materials might indeed represent a breakthrough in spintronics. So far, the search for materials hosting the coexistence between ferroelectricity and Rashba effects has focused mostly on inorganic systems. The presence of relatively heavy elements in tin- and lead-based halide perovskites (including hybrid organic–inorganic materials) suggests that large spin-orbit coupling might play a fundamental role. If spin-orbit coupling is linked with the lack of inversion symmetry inherent to ferroelectricity, this class of materials might exhibit exotic and technologically appealing spin splitting phenomena. Furthermore, the possibility to permanently tune and switch the direction of polarization via an electric field—possible in principle in ferroelectric perovskite halides—would imply a corresponding nonvolatile control over the spin texture. Interestingly, dipole and spin degrees of freedom, as well as their interplay, have been proposed to perform important functions in understanding the high power generation efficiency of perovskite halides, and as such they might open new avenues in halide-based photovoltaics.
All-Electric Spintronics through Surface/Interface Effects
Published in S. K. Sharma, Exchange Bias, 2017
In addition to the above discussions, the Rashba effect plays a crucial role in more exotic fields of physics and materials science such as topological classes of materials, Majorana fermions at semiconductor/superconductor interfaces, and ultracold atomic Bose and Fermi gases. Figure 7.29 illustrates the various subfields in which magnetization and spin directions can be manipulated electrically, and in which novel states of matter have been revealed. More details and recent developments on this topic are summarized in the excellent reviews by Bihlmayer et al. (2015) and Manchon et al. (2015).
Recent advances in two-dimensional ferromagnetism: strain-, doping-, structural- and electric field-engineering toward spintronic applications
Published in Science and Technology of Advanced Materials, 2022
Sheng Yu, Junyu Tang, Yu Wang, Feixiang Xu, Xiaoguang Li, Xinzhong Wang
Lastly, there have been made great breakthroughs in 2D spintronic devices, for example, a long spin diffusion length of 30 mm with long spin lifetimes over 12 ns at room temperature in spin valve devices based on graphene/hBN heterostructure [87] and high TMR up to 1.9 × 104% in MTJs composed of graphene/CrI3/graphene vdW heterostructures [93]. However, it is noteworthy that the TMR is still too low to be applied for the basic logic unit matched with commercialized complementary metal-oxide semiconductor electronics with typical on/off ratio above 105 in VLSI design. In other words, the development of practical 2D spintronic devices are still in its early states of theoretical- and experimental-explorations those are very far away from the mature industrial magnetics and electronics. Recently, it has been shown that electric-field induced Rashba effect is a key phenomenon for overcoming Boltzmann tyranny via topological quantum field effect and thus leading to energy-efficient switching devices by reducing subthreshold swing [172]. Since the intertwining between ferromagnetic exchange interaction, spin polarization, and the Rashba effect plays a central role in 2D magnetic materials, it can also be highlighted that such a topological quantum field effect in 2D magnetic materials may prove a promising ingredient for low-voltage spintronic devices.
Spin–lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe
Published in Philosophical Magazine, 2020
The presence of Zeeman energy splits the bands into spin-up and spin-down states in the presence of spin–orbit coupling. As a result, these states are further interacted by the Rashba–Dresselhaus effect and lead to the breaking of time-reversal symmetry [27]. The Rashba effect arises due to structural inversion symmetry breaking and splits the spin sub-bands, while the Dresselhaus effect arises due to an additional symmetry breaking, resulting in strain-induced Dresselhaus spin–orbit interaction. Thus, both Rashba and Dresselhaus effect adds an additional interaction in spin–orbit coupling. An inequality between Rashba and Dresselhaus spin–orbit interaction leads to a non-equilibrium condition in the magnetic state [25]. As a result, exchange energy associated with the conduction electrons behaves like a torque [35]. This torque acting on magnetic moments results in a spin–lattice relaxation behaviour in the magnetic state of this compound.