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Mechanically Flexible Interconnects and TSVs
Published in Vikas Choudhary, Krzysztof Iniewski, MEMS, 2017
Hyung Suk Yang, Paragkumar Thadesar, Chaoqi Zhang, Muhannad Bakir
Specifically, in capacitive sensing systems, parasitic capacitance of the circuit is correlated to the minimum detectable capacitance (resolution) (Yazdi et al., 2004; Seraji and Yavari, 2011). Despite the differences in the degree of sensitivity to the parasitic capacitance in various types of circuits used, it is possible to discern that an increase in the parasitic capacitance will increase the minimum detectable capacitance change in all cases, thereby resulting in the reduction of the sensitivity and overall resolution of the system (Yazdi et al., 2004). For some circuits where the effective parasitic capacitance is not reduced using techniques such as bootstrapping, it can also attenuate the signal at the input of the amplifier circuit, in turn affecting the sensitivity and resolution of the system even more. For high-frequency systems, other parasitic parameters play an important role; Joseph et al. (2008) show that inductance of interconnects play an important role in determining the performance of the radio frequency (RF) system.
Mechanically Flexible Interconnects and TSVs
Published in Laurent A. Francis, Krzysztof Iniewski, Novel Advances in Microsystems Technologies and Their Applications, 2017
Hyung Suk Yang, Paragkumar Thadesar, Chaoqi Zhang, Muhannad Bakir
Specifically, in capacitive sensing systems, parasitic capacitance of the circuit is correlated to the minimum detectable capacitance (resolution) (Yazdi et al., 2004; Seraji and Yavari, 2011). Despite the differences in the degree of sensitivity to the parasitic capacitance in various types of circuits used, it is possible to discern that an increase in the parasitic capacitance will increase the minimum detectable capacitance change in all cases, thereby resulting in the reduction of the sensitivity and overall resolution of the system (Yazdi et al., 2004). For some circuits where the effective parasitic capacitance is not reduced using techniques such as bootstrapping, it can also attenuate the signal at the input of the amplifier circuit, in turn affecting the sensitivity and resolution of the system even more. For high-frequency systems, other parasitic parameters play an important role; Joseph et al. (2008) shows that inductance of interconnects plays an important role in determining the performance of the RF system.
Design Technique for Microsystems Packaging and Integration
Published in Yufeng Jin, Zhiping Wang, Jing Chen, Introduction to Microsystem Packaging Technology, 2017
Yufeng Jin, Zhiping Wang, Jing Chen
(2) Parasitic capacitance, parasitic inductance, and noise. Parasitic capacitance is the inherent capacitance existing between any resistance pair in a circuit system. Similarly, parasitic inductance is engendered in any conductive current structure, and noises are nonideal effects of all kinds occurring in the system, which will create distortion of wave shape and signal amplitude. Parasitic capacitance and inductance are two important causes of the noises, and they should be reduced by the electrical design.
A 40-nm low-power WiFi SoC with clock gating and power management strategy
Published in International Journal of Electronics, 2023
Han Su, Jianbin Liu, Yanfeng Jiang
The transmitter up-converts the quadrature signals to the 2.4 GHz RF signal and drives the antenna with a high-powered CMOS power amplifier. To obtain sufficient output power, the size of the PA’s transistor should be large enough, which would increase the parasitic feedback capacitors. Since the PA in the designed chip works at high frequency, the effect of the parasitic capacitance could be more serious and deteriorate the performance of the PA, including the gain, the reverse isolation and the stability, etc. Neutralisation technique is used in the design to adopt two cross-coupling capacitors to make sure that the currents flowing through them are the same as the that in the parasitic capacitance, but with opposite polarity. In this manner, the intrinsic parasitic problem could be mitigated. So the output power can be obtained sufficiently. Digital calibration is used to improve the linearity of the PA, and additional calibrations are integrated to cancel any imperfections of the radio such as carrier leakage, I/O phase matching, baseband/RF nonlinearities and antenna matching. The built-in calibration routines reduce the amount of time and required for test and make test equipment unnecessary.
Parameter extraction and modelling of the MOS transistor by an equivalent resistance
Published in Mathematical and Computer Modelling of Dynamical Systems, 2021
Sherif M. Sharroush, Yasser S. Abdalla
As known, some of the internal capacitances of the MOSFET transistor are voltage dependent. For simplicity, all the internal capacitances at all the transistor terminals will be treated as voltage independent; however, they are size-dependent [31]. In order to determine the parasitic capacitance at a certain terminal of the device, this terminal must be attacked by a proper voltage or current source with a properly series or parallel resistance, then a transient analysis is performed. In the following, two methods for extracting the values of the internal capacitances associated with the four terminals are discussed. Let us illustrate these two methods in detail with regard to the gate terminal taking into account that the same procedure can be applied equally well on the other terminals.