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Energy-Efficient Photonic Interconnects for Computing Platforms
Published in Lukas Chrostowski, Krzysztof Iniewski, High-Speed Photonics Interconnects, 2017
Odile Liboiron-Ladouceur, Nicola Andriolli, Isabella Cerutti, Piero Castoldi, Raponi Pier Giorgio
The technology used for fabricating the photonic devices affects the operating power requirements. However, the electronic devices necessary for driving and controlling the photonic devices are also a major contributor to the power consumption. For example, an optical modulator such as a Mach-Zehnder modulator requires an electrical amplifier with large gain to provide the required voltage swing for the electro-optical effect. Directly modulated optical sources (e.g., VCSEL) or optical amplifiers (e.g., SOA) require an electrical current driver to provide optical gain. Finally, a photodetector includes electrical amplifiers as well as comparators. A recent study actually estimated that the power consumed by the electronic devices can be as high as the power consumed by optical devices in multiplane optical network architectures [9]. But with recent advancements in the CMOS fabrication platform enabling the integration of both the photonic devices and the associated electrical circuitry, the overall power consumption is expected to improve through more efficient device development [2,38]. Also, while active devices such as modulators, amplifiers, and photodetectors are essential in photonic interconnects, passive devices such as filters, couplers, and delay lines should be exploited where possible as they do not consume any energy. Moreover, technology offering the lowest propagation loss should be considered along with design optimization to minimize the insertion loss.
Soliton generation and transmission in optical fiber link
Published in Iraj Sadegh Amiri, Abdolkarim Afroozeh, Harith Ahmad, Integrated Micro-Ring Photonics, 2016
Iraj Sadegh Amiri, Abdolkarim Afroozeh, Harith Ahmad
The attenuation, or loss in signal power, resulting from the insertion of a component, such as a coupler or splice, in a circuit. Insertion loss is measured as a comparison of signal power at the point the incident energy strikes the component and the signal power at the point it exits the component. Insertion loss typically is measured in decibels (dB), although it also may be expressed as a coefficient or a fraction. The insertion loss of the add/drop filter system is show in Figure 8.3 which shows that how the bandwidth of the generated single pulse can be controlled via the system.
Introduction to Interfacing
Published in Francis Rumsey, John Watkinson, Digital Interface Handbook, 2013
Francis Rumsey, John Watkinson
The important features of connectors are their insertion loss and their return loss, these being respectively the amount of power lost due to the insertion of a connector into an otherwise unbroken link, and the amount of power reflected back in the direction of the source due to the presence of the connector. Typically insertion loss should be low (less than 1 dB), and return loss should be high (greater than 40 dB), for a reliable installation.
2.45 GHz Active Isolator based on asymmetric coupler
Published in Automatika, 2021
Ui-Gyu Choi, Bo-Yoon Yoo, Seong-Tae Han, Jong-Ryul Yang
Figure 6 presents the simulated large-signal results for the proposed isolator. The minimum insertion loss is 0.84 dB in the input power range of −30–40 dBm. The proposed isolator at the input power below 0 dBm has high isolation because the magnitude of the signal to be cancelled is small and it is necessary to only consider the amplifier gain at the fundamental frequency. When the input power is larger than 10 dBm, the isolation of the proposed isolator deteriorates regardless of the amplifier gain because the leakage feedback by the reverse isolation of the amplifier itself increases. Compared to the active isolator based on a symmetric coupler, the power handling capability of the proposed isolator can be improved by the weakly coupled signal, which is obtained by using the asymmetric coupler and is transmitted to the input signal of the amplifier. Furthermore, the power handling capability can be tuned by using the gain of the amplifier and the asymmetric coupling coefficients of the coupler. In other words, the performance improvement of the proposed isolator is based on the increase in the degree of freedom in the design by the asymmetric coupling coefficients, compared to the conventional isolator with symmetric coupling coefficients. When a weaker coupling coefficient is designed at the input of the isolator by the asymmetric coupler, the input power of the isolator can increase further to exhibit high isolation. However, the performance improvement is limited by the characteristics of the asymmetric coupler because the asymmetric coupling coefficients of the coupler should be compensated by the output impedance of the amplifier.
Finite Element Analysis of Graphene Oxide Hinge Structure-based RF NEM Switch
Published in IETE Journal of Research, 2023
Rekha Chaudhary, Prachi Jhanwar, Prasantha R. Mudimela
After computing the actuation voltage, analysing the von Mises stress and eigenfrequencies, RF performance of the NEM switch is the most crucial parameter to analyze. S-parameter analysis is necessary to optimise the behaviour of a NEM switch in terms of isolation, insertion loss at high frequency (HF). Isolation states the ability of the switch to prevent the signal from appearing at a port in the circuit where it is not desired. Insertion loss is the loss of signal power that occurs when a switch is inserted in a transmission line. S12 defines insertion loss in up-state and isolation in downstate [30].