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Proposed Adaptive Neural-Fuzzy Inference System (ANFIS) Identifier for M-ary Frequency Shift Keying (FSK) Signals with Low SNR
Published in Ibrahiem M. M. El Emary, Anna Brzozowska, Shaping the Future of ICT, 2017
Hadi A. Hamed, Sattar B. Sadkhan, Ashwaq Q. Hameed
ES represents transmitted symbol energy. The carrier frequency fc = (nc/2TS), ES = Eblog2M, TS = Tblog2M, where TS represents the symbol duration and nc is a fixed integer [16]. The main advantage of the FSK system is that it is not susceptible to noise; any voltage spikes introduced by noise affects the amplitude and the frequency is not affected. The physical capabilities of the carrier are the limiting factor of MFSK [17]. In the simulation MATLAB program, we assume Tb = 1 ms, and unity bit energy. Each of the MFSK signals have subcarrier frequencies for a certain modulation scheme that must be different from other schemes. The fixed integer nc is set to 2, 1, and 7 in the simulation program for 2FSK, 4FSK, and 8FSK signals, respectively, to prohibit the subcarrier frequencies from being identical for different MFSK signals.
Communication Systems
Published in Arun G. Phadke, Handbook of Electrical Engineering Calculations, 2018
A radio link is needed to send binary data at 30 Mbps with a BER at the receiver of 1 × 10−8. Find the S/N required at the receive end of the link allowing a receiver implementation margin of 2 dB, the receiver 3 dB bandwidth required, and the bandwidth occupied by the RF signal for filters with α = 0.5, for the following cases: FSK with non-coherent detection.BPSK with coherent detection.QPSK with coherent detection.
Communication Systems
Published in Douglas M. Marshall, R. Kurt Barnhart, Eric Shappee, Michael Most, Introduction to Unmanned Aircraft Systems, 2016
For the special case of frequency shift modulation (FSK), modulation that is widely used in UAV–GCS communication, all data need to be in digital form. Figure 12.6 shows how this particular type of modulation can be accomplished. First the digital data are converted to two different voltage levels. In this case, a low voltage level indicates a digital “1” and a high voltage level indicates a digital “0” (although the opposite is also possible). The FSK modulation uses two different frequencies to modulate the input digital data stream with the higher frequency being used to modulate 1s and a lower frequency to modulate 0s.
Alternative Approaches to Program Memristor and Reduce the Effect of Random Telegraphic Noise
Published in IETE Journal of Research, 2022
P. Michael Preetam Raj, M. P. Srinivasan, Souvik Kundu
Over the last one decade, memristor has emerged as the most promising two terminal circuit element owing to its important advantages such as improved scalability (< 10 nm), low power consumption (few µW), compatibility with CMOS fabrication process and its inherent ability to perform in-memory computing [1–5]. Since its inception, memristor has become an important component for modern day electronics with applications in various fields such as non-volatile memories, analog systems, digital electronics, neuromorphic computing and FPGA based reconfigurable systems [6–12]. In the era of modern electronics, it is capable of replacing the widely used metal oxide semiconductor (MOS) devices [13], which have reached fundamental device scaling limitations [5,14,15]. It is well known that frequency based modulation techniques were widely utilized for electronic applications [16]. Signals modulated through such techniques possess important advantages of high noise resilience and low power consumption, when compared to other existing modulated signals [16]. An important class of frequency based modulation technique is frequency shift keying (FSK) in which the digital data is in the form of a sine wave where each bit value is assigned a certain high frequency [17]. In FSK modulation, the digital data is stored in the frequency of the modulated signal. For example, within an m-ary FSK, m types of data get transmitted through utilizing m different frequencies [17]. Researchers have demonstrated that memristance changes with the frequency of the externally applied power source [12,18]. Hence, one can program memristance through utilizing frequency based modulation techniques in order to develop noise immune and low power consumption based electronic systems. Further, there is a necessity to develop advanced modulation mechanisms in order to increase the degree of freedom in programming the devices.