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EBIC studies on fluorinated grain boundaries and dislocations
Published in A G Cullis, P D Augustus, Microscopy of Semiconducting Materials, 1987, 2021
F G Kuper, J Th M de Hosson, J F Verwey
To study the electrical properties of defects after passivation one can measure overall quantities, like the resistivity along and perpendicular to grain boundaries like Ginley (1981) and Maby and Antoniadis (1982), or the generation time constant of a wafer, with a Zerbst experiment (Zerbst 1966). In contrast, the electrical recombination activity of defects can be measured locally using Electron Beam Induced Current (EBIC) which has a resolution between 1 and 10 micrometers depending on beam energy and material quality according to Marek (1982) and Leamy (1982). EBIC combines defect observation with an electrical measurement, because the intensity displayed on the screen corresponds to the local recombination of excess electron/hole pairs. An example is shown in figure 1, in which an optical picture of an etched sample and an EBIC picture of a comparable but unetched sample can be compared. It is seen that the major electrical activity of a stacking fault is confined to the bounding Frank partial dislocation. Here dangling bonds can be expected.
A novel method of extracting material parameters from within a confined region with the use of EBIC
Published in A. G. Cullis, P. A. Midgley, Microscopy of Semiconducting Materials 2003, 2018
Semiconductor material properties, such as minority carrier diffusion length and surface recombination velocity can be determined using the scanning electron microscope (SEM) operating in the electron beam induced current (EBIC) mode. One common experimental configuration for capturing the EBIC data is shown in Fig. L The sample consists of a p-n junction which is perpendicular to the surface upon which the electron beam is incident. The highgain amplifier measures the current induced within the sample due to the electron bombardment. The conventional method of evaluating the diffusion length is by plotting the EBIC signals against the beam-junction distances on a semi-logarithmic graph. The diffusion length can then be obtained from the negative reciprocal of the slope of the graph. However, the accuracy of the extracted diffusion length is affected by the surface recombination rate at the beam entrance surface.
Characterization of Electrodeposits and Electrodeposition Processes
Published in R.K. Pandey, S.N. Sahu, S.N. Sahu, S. Chandra, Handrook Of Semiconductor Electrodeposition, 2017
R.K. Pandey, S.N. Sahu, S.N. Sahu, S. Chandra
Electron Beam Induced Current Technique (EBIC). Information can also be obtained about diffusion length if current modulation is attained by an electron beam probing the surface (instead of photons, which give changes in photoconductivity). This technique is referred to as EBIC and generally comes as an attachment of a SEM that operates in the charge collection mode. In this mode, a voltage is applied across the specimen, which is simultaneously flushed with an electron beam at a distance x from the point where the excess carriers are collected. A large number of these excess carriers are generated because of the absorption of energy of the incident beam yielding an electron beam induced current (EBIC) signal given as iEBIC=Aexp(-xL)
Impact of neutron irradiation on electronic carrier transport properties in Ga2O3 and comparison with proton irradiation effects
Published in Radiation Effects and Defects in Solids, 2023
Jonathan Lee, Andrew C. Silverman, Elena Flitsiyan, Minghan Xian, Fan Ren, S. J. Pearton
The samples before and after exposure to the neutron and proton doses were characterized for changes in various parameters by current–voltage (I-V), capacitance–voltage (C-V), reverse recovery, on/off ratio, Schottky barrier height, diode ideality factor, Cathodoluminescence (CL) intensity, and EBIC (Electron Beam Induced Current). CL measurements were collected in-situ with Philips XL-30 SEM. The basic CL setup is presented in Figure 8. The XL-30 SEM is equipped with a Gatan MonoCL3, which collects light with a parabolic mirror and monochromator. The monochromate signal outputs to a photomultiplier tube (PMT), sensitive from 180 to 850 nm. The temperature range used for experiments in the XL-30 is restricted to vary between 80 and 393 K. The available acceleration voltages range from 3 to 30 kV.