Tungsten hexacarbonyl

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Atomic Layer Deposition of Two-Dimensional Semiconductors

Published in Mohammad Karbalaei Akbari, Serge Zhuiykov, Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications, 2020

Mohammad Karbalaei Akbari, Serge Zhuiykov

The uniform and ultrathin WO3film is one of the most interesting transition metal oxide semiconductors, which was successfully employed for significant number of optical, energy and environmental applications. Several different precursors have been utilized to deposit WOx film over the different substrates. One of the most widely used precursors is tungsten hexacarbonyl W(CO)6. The narrow ALD window between 195 and 205°C with a GPC of 0.2 Å/cycle was noted when the ozone was used as the oxygen source in the ALD process [68,69]. The deposited film was already amorphous, which can be later annealed to improve its crystallinity and be converted to monoclinic WO3 [69].

Whereabouts of missing atoms in a laser-injected Si (Part III)

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Journal Information

Published in Philosophical Magazine, 2023

Hiroyasu Saka, Hiroyuki Iwata, Makoto Takagi

In this study TEM specimens were prepared using a focused ion beam (FIB) technique. Here, Ga ions are used to sputter away, making the sample under consideration electron-transparent. To protect against surface damage by Ga ions, the surface of the whole sample is first coated with tungsten hexacarbonyl W(CO)6. Then, the surface of the area to be observed is irradiated with Ga ions to decompose W(CO)6, leading to the formation of a protective film of pure W. In these processes of site specification, the sample is likely heated to some extent.