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Nanosensor Laboratory
Published in Vinod Kumar Khanna, Nanosensors, 2021
What about the higher dielectric constant (high-κ) film deposition? The silicon oxynitride is the starting point toward the use of a material with high-κ and possessing satisfactory insulating properties as the gate insulator. It enables the reduction of the gate tunneling current, using materials compatible with silicon technology, and combining SiO2 and silicon nitride (Si3N4) in the insulating layer. The results achieved depend on the processing of the mixture. Various mixtures of the form SiNxOy, where 3x + 2y = 4, known as oxynitrides, are used as the gate insulator. A gate–substrate capacitance, equivalent to an oxide insulator about 2 nm thinner, is obtained for a given tunneling current density. Another method superimposes a layer of silicon nitride above a thin SiO2 layer as the gate insulator, thereby preserving the desirable qualities of the contact of SiO2 on silicon. The nitride has a dielectric constant of 7.0, as compared with 3.9 for the oxide, and the use of silicon nitride is well established in silicon technology.
Oxidation and Gate Dielectrics
Published in Robert Doering, Yoshio Nishi, Handbook of Semiconductor Manufacturing Technology, 2017
C. Rinn Cleavelin, Luigi Colombo, Hiro Niimi, Sylvia Pas, Eric M. Vogel
Silicon oxynitride films have been implemented in recent years due to some of their properties including higher barrier properties to impurity penetration, such as Boron, hot-carrier resistance, radiation damage resistance, and improved high field electron channel mobility and dielectric constant modification [51–58]. These films were mainly formed through the thermal nitridation of silicon oxide or the oxidation of silicon in nitrogen containing ambient, such as NH3, N2O, and NO. In recent years, industry has developed and implemented into production a plasma nitridation technique described below that provides a preferred nitrogen profile through the gate dielectric. A review of these main processes is discussed below. It should be mentioned that many of the experimental results associated with oxynitrides are equipment-specific. Furthermore, wide ranges of processing conditions have been used to form and modify silicon oxynitride. Unless otherwise stated, the following review represents results that are relatively generic with detailed experimental conditions. However, the details of results will vary depending on the experimental conditions.
Effect of nitrogen gas pressure during heat treatment on the morphology of silicon nitride fibers synthesized by carbothermal nitridation
Published in Journal of Asian Ceramic Societies, 2018
Sotaro Baba, Tomoyo Goto, Sung Hun Cho, Tohru Sekino
Another reason was considered based on the results of the study into the thermodynamic effects. EDS elemental analysis of the fibers showed that the fibers with complicated shapes contained aluminum in addition to Si and N (Figure 5). It is thought that this alumina derived from the alumina crucible used during heat treatment. The XRD results showed that silicon oxynitride (Si2N2O) was produced.