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III Nitrides for Gas Sensing Applications
Published in Ankur Gupta, Mahesh Kumar, Rajeev Kumar Singh, Shantanu Bhattacharya, Gas Sensors, 2023
In the III–nitride material family, indium nitride (InN) exhibits an unusual phenomenon of strong surface electron accumulation within 5 nm from the surface [65]. This results in the creation of a natural two-dimensional electron gas (2DEG) at the InN surface unlike the 2DEGs occurring at the buried heterostructure interfaces for HEMT-based devices. This is highly beneficial to sensing processes which is a surface-dominated phenomenon [66]. InN is chemically stable and can withstand radiation which makes it attractive in several gas sensing applications. The suitability of InN to gas sensing is first demonstrated by chemical exposure to the InN surface followed by subsequent electrical transport property measurements [67]. The measurement of Hall mobility upon exposure to several solvents like methanol, isopropyl alcohol, toluene etc shows varying degrees of reduction in mobility. Hence this acts as an easy way to attain selectivity. However, such measurement is ex-situ and may not provide means of fabricating a device. But they provide a starting point to designing InN sensors according to the demands of industry.
Organic–Inorganic Semiconductor Heterojunctions for Hybrid Light-Emitting Diodes
Published in Ye Zhou, Optoelectronic Organic–Inorganic Semiconductor Heterojunctions, 2021
The III-nitride semiconductor material system consists of the materials like gallium nitride (GaN), indium nitride (InN), and aluminium nitride (AlN) along with their alloys. This material family has gained a lot of interest due to the bandgap tunability of the ternary (e.g., InGaN and AlGaN) and quaternary alloys (e.g., InAlGaN) from the deep ultraviolet (UV) to the near infrared wavelength regions [10,11]. By alloying GaN with InN, it is possible to cover the entire visible spectrum, whereas alloying GaN with AlN allows the bandgap to be shifted into the UV spectral region. Figure 10.1a illustrates the spectral range covered by the III-nitrides showing the room temperature bandgap of wurtzite AlN, GaN, and InN plotted against their a-lattice constant [12]. The most common crystal structure for the III-nitrides is the thermodynamically stable hexagonal wurtzite structure as shown in Figure 10.1b, which is defined by the a- and c-lattice constants [13].
Thermally Grown Native Oxide Thin Films on SiC
Published in Kuan Yew Cheong, Two-Dimensional Nanostructures for Energy-Related Applications, 2017
Si has a larger bandgap (1.12 eV) in comparison with Ge, which results in smaller leakage current and thereby allows Si-based devices to be built with maximum operating temperature of about 150°C. Si has dominated as the main stream semiconductor material in the electronics industry due to its feasibility to form chemically stable silicon dioxide (SiO2), which is the most critical requirement for the formation of gate oxide (Nicollian and Brews 1982, Stanley and Richard 2000). However, Si is not suitable for high temperature, high power and high switching frequencies applications as the bulk of its properties are unable to withstand high breakdown field (Si critical avalanche electric field is 0.3 MV/cm) (Zhao 2005). To overcome these limitations, wide bandgap semiconductors are presently switching from research and development into real world applications. Wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and indium nitride (InN) can be categorized into one group, while diamond, boron nitride (BN) and aluminum nitride (AlN) into another because the former has a bandgap of 2–3.5 eV and the latter 5.5–6.5 eV (Chow and Agarwal 2006). As compared to Si, wide bandgap semiconductors have superior physical properties, which offer a lower intrinsic carrier concentration (10 to 35 orders of magnitude), higher electric breakdown field (4–20 times), a higher thermal conductivity (3–13 times) and a larger saturated electron drift velocity (2–2.5 times) (Siergiej et al. 1999, Wang and Zhong 2002, Dimitrijev and Jamet 2003, Chow and Agarwal 2006).
Influence of sputtering power and Ar–N2 flow on the structure and optical properties of indium nitride films prepared by magnetron sputtering
Published in Radiation Effects and Defects in Solids, 2019
Faiza Anjum, Riaz Ahmad, Naveed Afzal
In recent years, indium nitride (InN) thin films have become one of the important III-nitride semiconductors that find a great interest in various electronic and optoelectronic applications. InN has a wurtzite crystal structure, and it has received tremendous attention due to its interesting physical properties, such as narrow and direct band gap (1), high electron mobility (2), small effective mass (3), and high electron drift velocity (4). These properties make InN an important material with potential innovative applications in high efficiency solar cells, light-emitting diodes (LEDs), full color displays, optical sensors, laser diodes (LDs), and high electron mobility transistors (5–11).
Effects of coating cycles on spin-coated indium nitride thin films
Published in Surface Engineering, 2018
Zhi Yin Lee, Sha Shiong Ng, Fong Kwong Yam, Zainuriah Hassan
Indium nitride (InN) with an energy band gap of 0.7–1.0 eV has attracted intense research interest in the scientific community. The remarkable material properties, such as high electron mobility, small electron effective mass and low carrier concentration, make it as a promising compound for the applications in optical and electronic devices. For instance, InN-based devices are light-emitting diodes, terahertz emitters, high-speed field-effect transistors and high-efficiency solar cells [1–3].