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Factors Effecting the Demand for Electricity From the Smart Grid
Published in Clark W. Gellings, Smart Grid Planning and Implementation, 2020
Gallium nitride is a wide bandgap semiconductor historically used in LEDs has potential advantages for use in optoelectronic, high-power, and high-frequency devices. GaN-based violet diodes are utilized in Blu-ray players.Advantages— Higher frequency switching and smaller transistors— Smaller and fewer periphery components (capacitors and inductors)— More efficient than MOSFETs (a type of transistor used for amplifying or switching electronic signals)— Lower operational temperature then MOSFETs— Operates in higher temperature then traditional IC technologiesLaboratory tests have shown that GaN transistors are more efficient in simple DC-to-DC conversions.As MOSFETs are hitting their theoretical limits, GaN has already surpassed their maximum capabilities.
Gas-source molecular beam epitaxy of GaN on SIMOX(l 11) substrates using hydrazine
Published in M S Shur, R A Suris, Compound Semiconductors 1996, 2020
V.G. Antipov, A.I. Guriev, V.A. Elyukhin, R.N. Kyutt, A.B. Smirnov, N.N. Faleev, S. A. Nikishin, G.A. Seregm, H. Temkin
Gallium nitride is one of the most promising semiconductors with a wide-energy-gap nitrides for optoelectronic devices in the blue region and for high-temperature electronics[1]. From the standpoint of a prospective device technology, the growth of GaN on silicon substrate is both a scientifically challenging and a technologically important problem, since it offers the potential to integrate GaN and Si devices[2]. The difficulties are due to the large lattice mismatch (~17%) and difference of thermal-expansion coefficient and crystal structure. For GaN film growth by MBE, plasma enhanced or electron cyclotron resonance sources are generally employed to activate the nitrogen species. But in most cases, when high N fluxes have been used, the film degradation due to ion damage was noted[3]. In an alternative approach, the nitrogen-containing agent is decomposed on the substrate surface by pyrolysis. Commonly employed ammonia (NH3) as a nitrogen source involves the substrate temperatures in excess of 700°C. On the other hand, growth temperature lowering will allow to increase the incorporation of the volatile nitrogen species reducing the n-type background as well as allowing the growth of atomically abrupt nitride heterojunctions.
Systems Based on GaN
Published in Vasyl Tomashyk, Quaternary Alloys Based on III-V Semiconductors, 2018
GaP–NH3. GaP begins to interact with NH3 at 850°C (Zykov and Gaydo 1973). X-ray amorphous phosphorus nitrides are formed in the temperature range from 850°C to 1020°C, and at the higher temperatures GaN is formed. Gallium nitride with stoichiometric composition can be obtained by nitriding of gallium phosphide with ammonia at 1100°C.
Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors
Published in Journal of Asian Ceramic Societies, 2023
Seoung-Hyoun Kim, Chang-Hyeon Jo, Min-Sung Bae, Masaya Ichimura, Jung-Hyuk Koh
Wide energy bandgap semiconductors, such as 4 H-SiC (3.23 eV), β-Ga2O3 (4.8–4.9 eV), GaAs (1.43 eV), and GaN (3.4 eV), have been extensively investigated. In particular, gallium nitride (GaN) has attracted attention for power device applications because of its wide energy bandgap (3.4 eV), high thermal conductivity (1.3 W/(cm·K) at 300 K), high lateral breakdown voltage (10 kV), and high electron mobility (1000 cm2/(V·s at 300 K)) [1–3]. They have therefore been used in various applications such as LED, high-power transistors, and high-frequency devices [4–7]. Wide energy bandgap semiconductors are especially promising for power device applications that can withstand high voltages and currents even at high temperatures. Such devices should exhibit low leakage currents at high electric fields, low thermal currents at high temperatures, and low switching currents at high frequencies. A high current or fast switching can sometimes induce significant heating problems during operation; therefore, power devices should not be influenced by the surrounding thermal atmosphere.
Researches on the performance of GaN-PIN betavoltaic nuclear battery
Published in Radiation Effects and Defects in Solids, 2022
Shanxue Xi, Linxiang Li, Chunzhi Zhou, Haijun Li, Guangwei Huang, Kun Wu, Zungang Wang, Yiyun Zhang
In recent years, numbers of related researches on the theory and experiment of betavoltaic nuclear batteries have been reported, mainly involving many aspects, including miniaturisation, output performance, battery structure, working life, energy conversion efficiency and so on. Monocrystalline silicon is the earliest material used in nuclear batteries research. However, due to the limited properties of silicon materials (narrow band gap, very sensitive to radiation and large leakage current of silicon-based devices), the research of energy conversion materials for nuclear batteries began to transfer from silicon to wide band gap semiconductor materials (8–11). Gallium nitride (GaN) is the representative of the third-generation semiconductor (wide band gap) materials and has a very broad prospects for commercial applications. It has the advantages of large band gap, high energy conversion efficiency, strong thermal stability, high thermal conductivity, stable chemical properties, good electron transport performance, excellent anti-radiation and so on (12–17). Therefore, it is widely used in nuclear batteries.
The Analysis Model of AlGaN/GaN HEMTs with Electric Field Modulation Effect
Published in IETE Technical Review, 2020
Luoyun Yang, Baoxing Duan, Ziming Dong, Yandong Wang, Yintang Yang
Gallium nitride (GaN) is one of the third generation of wide-bandgap semiconductor materials without the inherent shortcomings of the first two generations of semiconductor materials, like Si and GaAs. Due to its wide band gap (> = 3.4 eV), high breakdown field (3MV/cm), high electron saturation speed (>2 × 107cm/s), high thermal conductivity and excellent properties, GaN material is suitable for high-power, high-temperature, and high-frequency applications [1]. GaN power devices [2] are considered to be the core of next-generation power devices, especially for the AlGaN/GaN heterojunction material system. High concentration (>1 × 1013cm−2) and mobility (1000–2000 cm2/V. s) 2DEG are generated at the interface of the heterojunction because the spontaneous polarization and piezoelectric polarization effects [3–5]. High electron mobility transistor (HEMT) has developed rapidly in recent years based on this heterojunction material system [6–9]. In high-power AlGaN/GaN HEMT devices, the breakdown voltage (BV) is a key parameter that we need to consider [10]. Researchers have designed many methods and techniques to get higher breakdown voltage and lower specific on-resistance, such as increase of breakdown voltage on AlGaN/GaN HEMTs by employing proton implantation [11], AlGaN/GaN HEMTs with integrated slant field plates [12], the new RESURF AlGaN/GaN HEMTs [13] and so on [14–16].