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Materials Used for General Radiation Detection
Published in Alan Owens, Semiconductor Radiation Detectors, 2019
Indium arsenide, or indium monoarsenide (InAs) is a direct bandgap material with a cubic crystal structure, a bandgap of 0.35 eV, an electron mobility of ~33,000 cm2V–1s–1 and a density of 4.68 gcm–3. It has conventionally been used in infrared detection in the wavelength range of (1–3.8) µm and to produce infrared diode lasers for telecom applications. Theoretically, the energy resolution of InAs based X-ray detectors can be expected to exceed that of Si by a factor of two by virtue of its low bandgap. Recently, Säynätjoki et al. [77] fabricated a 3 × 3 pixel array onto a commercially available substrate. The active pixel volumes were defined by diffusing Zn through a mask using metal–organic vapor phase epitaxy (MOVPE). The pixels themselves were then defined by chemically etching mesas and contacts applied by metallization. The pixel sizes were 250 µm square and the thickness of the active layer ~1 µm. Typically, reverse leakage currents were of the order of a few mA at liquid nitrogen temperature. The device was found to be responsive, but not spectroscopic, to 5.5 MeV alpha particles.
Flexible and Stretchable High-Frequency RF Electronics
Published in Muhammad Mustafa Hussain, Nazek El-Atab, Handbook of Flexible and Stretchable Electronics, 2019
Juhwan Lee, Inkyu Lee, Zhenqiang Ma
Another compound, indium arsenide (InAs) can promote transistors operating at higher frequencies than others. It is barely utilized within the semiconductor industry because of the costly process for successful epitaxial growth to minimize lattice mismatch. However, it is theoretically feasible to have the fastest speed compared to other compound semiconductor materials such as InAs-based high-electron-mobility transistors (HEMT) (Kim and Del Alamo 2010). The transistor recorded fT and fmax of 644 and 681 GHz, respectively.
Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles
Published in Journal of Environmental Science and Health, Part A, 2020
Chi H. Nguyen, Jim A. Field, Reyes Sierra-Alvarez
Due to their unique photonic properties and high electron mobility, III-V semiconducting nanomaterials (e.g., gallium arsenide (GaAs) and indium arsenide (InAs), gallium-indium arsenide (GaInAs)) are increasingly used in a wide array of electronic products including mobile phones, light emitting diodes (LEDs) for displays, light sources and detectors, microcircuits, lasers, bioimaging agents, and biosensors.[1–4] GaAs is also utilized in the manufacturing of thin film photovoltaic solar modules and other photovaltic devices. The industrial application of GaAs is growing rapidly. 5The world primary production of Ga in 2018, estimated at 410 metric tons, was 5.25-fold higher than in 2009.[5,6] This rapid growth is due to the higher content of GaAs in smartphones and increasing use of GaAs-based LEDs.[7]
Performance analysis of high-concentrated multi-junction solar cells in hot climate
Published in International Journal of Sustainable Energy, 2018
Adel A. Ghoneim, Kandil M. Kandil, Talal H. Alzanki, Mohammad R. Alenezi
Two HCPV modules have been adapted to conduct current work and to calibrate predictions of present developed model. Two sets of measured data are adapted for model calibration: gallium indium phosphide/gallium indium arsenide/germanium (GaInP/GaInAs/Ge) triple-junction data of Azurspace (2016) and Spectrolab C1MJ cell (Kinsey and Edmondson 2009). HCPV device electrical output is greatly influenced by changing incident spectral distribution. AM and AOD have a significant impact on HCPV performance. The AM relates solar beam optical path length through atmosphere to that through a standard atmosphere. Aerosols are tiny molecules suspended in air often in liquid or solid phase that spread and absorb sun rays. AOD is a value to assess their effect in solar radiation.
Self-powered photo-thermo electrochemical sensor for harvesting of low photo thermal energy
Published in Energy Sources, Part A: Recovery, Utilization, and Environmental Effects, 2020
Faheem Ali, Hafiz Muhammad Salman Ajmal, Waqar Khan
In last decades, organic PTE sensors have been studied for energy harvesting purpose and still are under development phase. Nevertheless, it is believed that they can be one of the most favorable alternatives to inorganic sensors because they have light weight and simple fabrication steps involved at low processing temperature. A brief literature review about electrochemical devices based on photothermal energy process is described as following: A Light-emitting electrochemical device based on electroluminescent polymer was reported very first time (Johansson et al. 1999) in which an organic salt was used as a solid electrolyte. However, the external efficiency of the cell was quite low. After that many other attempts have been made to investigate an efficient electrolyte for same kind of applications. Karimov et al. (2006) studied the electrochemical properties of Zinc/OD/carbon-based electrochemical cell, and they observed the charging-discharging cycles of the device, and the charging/discharging current efficiency was 67%. As the continuation of this process, Saleem et al. (2009) studied the electrochemical properties of Zinc/OD/carbon devices by varying the concentration of OD solution and reported an increase of open circuit voltage and short circuit current with the increase of OD concentration. Recently, a humidity sensor based on OD and graphene electrolyte was fabricated to investigate the properties of OD (Chani et al. 2019). From all these research efforts, the OD has emerged as a substantial material for the solar-energy conversion into electrical energy. In such devices, photons falling on the semiconductor materials generate electron-hole pairs, and the charge transportation are driven by the oxidation-reduction of OD to the surface of counter electrodes. More detailed phenomena of the power generation in thermo-electrochemical sensor devices have been described in (Ahmad et al. 2016). The aforementioned studies demonstrate that the considerable amount of efforts has been done for the characterizations of photo-electrochemical device as a cell with different schemes of organic dyes and pairs of conducting electrodes. While, the relatively small amount of work is reported on thermo-photo-electrochemical sensor with organic dyes. In particular, there exists no report in the literature on improved performance of PTE with OD as an electrolyte, n-type indium arsenide (n-InAs), and zinc (Zn) as electrodes of the sensor.