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Analytical Modeling of High Electron Mobility Transistors
Published in D. Nirmal, J. Ajayan, Handbook for III-V High Electron Mobility Transistor Technologies, 2019
AlInSb/InSb high electron mobility transistors (HEMTs) has vital role in high-current, high-voltage, high-power and high-frequency operations. The materials used in this HEMT device possess the advantage of high-current drivability, thermal stability and high-breakdown fields. Indium Antimonide is a dark grey material with zincblende crystal structure has the advantage of lowest band gap 0.1 eV at room temperature and 0.23 eV at 80 K and highest lattice constant 0.64 nm than any other quantum well formed of III and V group material system. The largest ambient-temperature electron mobility of undopedInSb quantum well is found to be approximately as high as 78,000 cm2/V-s than any other material. Hence quantum well formed by sandwiching layers of AlInSb/InSb help to construct fastest transistors. It is a trend in the compound semiconductor industry to continuously develop devices, which are extremely small, fast and consumes less power.
III–V Detectors
Published in Antoni Rogalski, Infrared and Terahertz Detectors, 2019
Indium antimonide detectors have been extensively used in high-quality detection systems and have found numerous applications in the defense and space industry for more than 40 years. Perhaps the best known (and most successful) of these systems has been the Sidewinder air-to-air antiaircraft missile. Manufacturing techniques for InSb are well-established, and the invention of charge-coupled devices (CCD) and complementary metal oxide semiconductor (CMOS) hybrid devices has increased the interest in this semiconductor.
Materials Used for General Radiation Detection
Published in Alan Owens, Semiconductor Radiation Detectors, 2019
Like InAs, indium antimonide (InSb) is commonly used to fabricate infrared detectors that are sensitive in the wavelength range 1–5 µm. It has a zincblende crystal structure and a bandgap of 0.165 eV, almost 10 times less than silicon. Its density of 5.78 g cm–3 is twice that of Si. Its electron mobility is exceedingly high (78,000 cm2V–1s–1 at 77K), and although its hole mobilities are considerably lower (750 cm2V–1s–1), they are still higher than those measured in HgI2 and CdTe. These are very attractive attributes for a potential high-resolution radiation detector. Although initially suggested as an X-ray detection medium by Harris [78] in 1986, very little work has been carried out until recently. Kanno et al. [79] fabricated both Schottky and p–n junction diodes on p-type InSb grown by the vertical Bridgman method. A 3 mm diameter, 10-micron thick mesa was etched into the substrate and doped with Sn to form an n-type layer. An evaporation of Au–Pd formed a Schottky contact for the Schottky diode and an Al–Sn evaporation formed the ohmic contact for the p-n device. The I–V characteristics show typical diode behaviour with reverse leakage currents in the tens of microampere range. The estimated resistances of the Schottky and pn junctions at 4.2 K were 50 kΩ and 250 kΩ respectively. Both detectors were found to be responsive to 5.5 MeV alpha rays with FWHM energy resolutions of ~25% at 20 K. The Schottky diode detector operated up to 77 K, the p-n junction device up to 115 K. Although not spectroscopic, undoped Schottky devices were found to be responsive to 60 keV and 81 keV gamma-rays [80].
A Novel Design of Epidermal Flexible Antenna on Supraorbital Nerve to Correlate Diabetes and Anemia
Published in IETE Journal of Research, 2023
Kannagi V, A Jawahar, Vijay Nath
A micro-machined antenna with a glass surface has been presented that performs RF energy harvesting for applications with a wireless sensor node. A system based on a new combined RF energy harvester circuitry utilizing a transparent receiving antenna fabricated by a micro-machining process has been proposed [2]. A reconfigurable sensing microstrip patch antenna has been designed to sense large temperature changes in an unpleasant environment. Indium antimonide (InSb) is a temperature sensitive semiconductor material employed in reconfigurable sensing microstrip patch antenna design in the terahertz (THz) frequency band. An analysis of the temperature dependence of the electrical properties of InSb has been presented [3].