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Semiconductor Detectors
Published in Douglas S. McGregor, J. Kenneth Shultis, Radiation Detection, 2020
Douglas S. McGregor, J. Kenneth Shultis
Group III-V semiconductors are produced from elements in group III and group V of the periodic table. These materials include binary compounds such as GaAs, GaP, InP, and AlSb, ternary compounds such as InGaAs and InGaP, and quaternary compounds such as InGaAsP. For ionizing radiation detector applications, the binary compounds have been investigated the most, although some ternary and quaternary materials have been explored, primarily as contact materials. Both GaAs and InP are relatively mature semiconductors that are in common use within the VLSI industry. Both of these important semiconductors have direct band gaps and show negative differential resistance at high electric fields. Because of their direct band gaps, these two semiconductors have been used most commonly for photonic emission devices such as LEDs and laser diodes. The relatively wide band-gap energies of many III-V semiconductors have motivated researchers to investigate their potential use as room temperature semiconductor radiation detectors.
Force-System Resultants and Equilibrium
Published in Richard C. Dorf, The Engineering Handbook, 2018
InGaAsP lasers are especially useful for long-range fiber optic applications. This is a result of the emission wavelength of 1550nm=1.55μm being in the range of minimum attenuation for the fiber. In addition, the power output of up to 100 mW for InGaAsP is another favorable factor for long-range fiber optic applications.
Heterostructure Photocells and Photodetectors
Published in M S Shur, R A Suris, Compound Semiconductors 1996, 2020
The GaxIn1-xAsyP1-y system has been investigated for the growth of lattice matched heterostructures of GalnAsP/GaAs (1-y=2.13x) and GaInAsP/InP (y=2.2x). Reviews of these systems have been published [4], The quaternary composition range for lattice matched GalnAsP/InP includes the two optical fiber communication windows known today: zero dispersion at λ=1.33 μm and minimum loss at λ=1.55 μm. Today InGaAsP/InP lasers are the mainstay of optical communication systems.
Photonics radar based LSS targets’ postures’ m-D and cadence frequency imaging using empirical wavelet transform technique
Published in The Imaging Science Journal, 2023
Nargis Akhter, A. Arockia Bazil Raj, K. Prabu
The picture of a developed C-band (5.3 GHz) CW photonics radar system setup is shown in Figure 2, where the test-bed consists of photonics transmitter (Tx) chain, receiver (Rx) chain and the data processing computer for executing the proposed targets’ m-D signature extraction algorithms. In the Tx chain, RF signal, generated from an electrical oscillator, is used to modulate a 1550 nm optical signal sourced from a diode-fibre laser, at a Mach–Zehnder modulator (MZM). The MZM modulates the intensity of the optical signal in accordance to the frequency of RF signal. The RF modulated optical signal is divided into two arms (upper arm for transmission while the lower arm for reference to the Rx chain) by a 3 dB optical splitter. Since all these opto-electronic operations happened with low-power, an Erbium doped fibre amplifier (EDFA) is used in the Tx chain in order to amplify the RF modulated optical signal. The amplified optical signal is taken (via a single mode 9 µm optical waveguide) to the optical-to-electrical (O/E) converter (InGaAsP photo-diode) [49]. The electrical output of O/E module is amplified by a bandwidth, and gain specified electrical power amplifier, and then transmitted to free space via a 6 dB gain 1 × 4 patch array antenna. The schematic diagram showing the design of C-band photonics CW radar is shown in Figure 3. A high-frequency (16 GHz) real-time oscilloscope (RTO) (refer Figure 2), is used to monitor the profile of the generated RF signal. The transmitted (EM) signal falls on the LSS targets, refer Figure 1(a,b), behaving at different postures in front of the developed photonics radar, and got scattered.
Nuclear spin symmetry conservation and relaxation of water (H216O) seeded in supersonic jets of argon and oxygen: measurements by cavity ring-down laser spectroscopy
Published in Molecular Physics, 2018
Carine Manca Tanner, Martin Quack, David Schmidiger
A near-infrared InGaAsP laser diode (Radians Innova) emits up to about 1 mW between 7510 and 8000 cm−1 in a single-frequency mode. The main part of the laser output is led through an Acousto-Optical Modulator (AOM; Isomet 1205C-2); the first-order deflection is transferred through a single-mode optical fibre and coupled into an optical cavity composed of two highly reflective concave mirrors with 1 m radius (Newport, R>99.97%) mounted on an optical bench (Newport mirror holders and Spindler and Hoyer, Mikrobank) at a distance of about 33 cm.
Temperature response of all-optical XOR logic function based on different semiconductor optical amplifiers
Published in Journal of Modern Optics, 2022
Amer Kotb, Gopal Verma, Wei Li
InGaAsP/InP are direct band-gap semiconductor materials employed in this simulation. To realize the XOR gate using the proposed amplifiers, the operation of the RSOAs requires a circulator to enter and exit the signal from the RSOA anti-reflective front facet [4], while the other amplifiers, i.e. SOAs, QD-SOAs, and PC-SOAs, operate almost the same. Figure 1 shows the schematic diagram and truth table of the XOR logic operation utilizing ordinary SOAs-based MZI.