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Wave Mixing Effects in Semiconductor Optical Amplifiers
Published in Joachim Piprek, Handbook of Optoelectronic Device Modeling and Simulation, 2017
Simeon N. Kaunga-Nyirenda, Michal Dlubek, Jun Jun Lim, Steve Bull, Andrew Phillips, Slawomir Sujecki, Eric Larkins
Indium gallium arsenide (InGaAs) was used as the active material for the quantum wells. The barrier material was strained InGaAs (−0.67% strain) (Kelly et al., 1996). This matches the material system for the device used in the experiments reported in (Dlubek et al., 2010). The indium composition in the InGaAs active material was taken to be 0.62. This reproduced the device characteristics as reported in its data sheet and (Kelly et al., 1996). This device has a nonlinear geometry, (Figure 24.3) so an effective length with a confinement factor equal to that of the untapered region was used in the simulations. All simulations were performed at 300 K. The carrier temperature was assumed to remain constant and equal to that of the lattice.
Semiconductor Light Sources and Detectors
Published in Shyamal Bhadra, Ajoy Ghatak, Guided Wave Optics and Photonic Devices, 2017
Compounds formed from two elements of Group III with one element of Group V (or one from Group III and two from Group V) are important ternary semiconductors. AlxGa1−xAs, for example, is a ternary compound with properties intermediate between those of AlAs and GaAs, depending on the compositional mixing ratio x, where x denotes the fraction of Ga atoms in GaAs replaced by Al atoms (see Figure 8.7). The bandgap energy for this material varies between 1.42 eV (Eg of GaAs) and 2.16 eV (Eg of AlAs), as x is varied between 0 and 1. These are also called alloy semiconductors.
Facet formation and selective area epitaxy of InGaAs by chemical beam epitaxy using unprecracked monoethylarsine
Published in Jong-Chun Woo, Yoon Soo Park, Compound Semiconductors 1995, 2020
Sung-Bock Kim, Seong-Ju Park, Jeong-Rae Ro, El-Hang Lee
In this study, we have investigated the facet formation of InGaAs and selective area epitaxy by CBE using unprecracked monoethylarsine (MEAs) under various growth conditions, such as pattern direction, growth temperature, and filling factor which is defined the ratio of the opening area to the total area. This study showed that InGaAs epilayers can be selectively grown using unprecracked MEAs at a wide range of temperatures from 540 °C to 640 °C and at the V/III ratio of 10. InGaAs was selectively grown at lower growth temperature than the conventional CBE using precracked hydride gas and the growth rate and indium composition corresponding to filling factor were not varied.
Numerical simulation analysis of low energy proton irradiation mechanism of In x Ga1-x As (x = 0.2, 0.3, 0.53) solar cell
Published in Radiation Effects and Defects in Solids, 2022
S. Y. Zhang, Y. Zhuang, A. Aierken, Q. G. Song, X. Yang, X. N. Li, Q. Zhang, Y. B. Dou, Q. Wang
Solar cells are the main power source of on-orbit space crafts and satellites. With the development of space mission, solar cells with higher conversion efficiency are needed (1,2). As it is known that InGaAs (indium gallium arsenide) ternary compound semiconductor is ideal sub-cell material in triple- (3–5) or more junction solar cells (6,7) for its tunable bandgap and lattice constant. Also, InGaAs material has the advantages of high mobility and good radiation resistance (8,9). With the ratio x of indium ranging from 0.2 to 0.53, the lattice constant of InxGa1-xAs changes from 5.6533 Å of GaAs to 6.0583 Å of InAs, and the bandgap changes from 1.42 to 0.35 eV, and the cutoff wavelength changes from 0.87 to 3.5 μm. Due to the ideal bandgap of In0.3Ga0.7As (1.0 eV) material, it was used as the bottom sub-cell for inverted metamorphic (IMM) triple-junction (TJ) solar cells such as GaInP/GaAs/In0.3Ga0.7As (1.9/1.42/1.0 eV) solar cell, which achieved the efficiency of 37.9% (AM1.5, 1 sun), 44.4% (AM1.5, 302 suns) (10,11) and 33% (AM0) (12). GaInP/GaAs/In0.3Ga0.7As/In0.53Ga0.47As (1.9/1.42/1.0/0.7 eV) four-junction (FJ) solar cells were reported by Emcore and Spectrolab (13), by adding a fourth sub-cell to increase the bandwidth of the absorption spectrum, which possessing bandgap combination of 1.9/1.42/1.0/0.7 eV is able to get better current matching at AM0 condition and the theoretical conversion efficiency can reach 38–42% (14).
Analysis of 14nm technology node In0.53Ga0.47As nFinFET integrated with In0.52Al0.48As cap layer for high-speed circuits
Published in International Journal of Electronics, 2019
The replacement of silicon with InGaAs as the channel material for nFin field-effect-transistors (FinFETs) is currently extensively studied in order to enable CMOS scaling beyond the 14 nm node. The outstanding electron transport property and relative mobility of InGaAs makes it favourable for CMOS-based high-speed application.