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Nanosensor Laboratory
Published in Vinod Kumar Khanna, Nanosensors, 2021
Can etching be done without liquid etchants? Yes, reactive-ion etching (RIE) is a process that uses dry chemical and physical processes to etch away desired materials. What is the essence of RIE? In RIE, the substrate is placed inside a reactor, in which a mixture of gases is introduced (Figure 3.13). A plasma (a gas of positive ions and free electrons containing approximately equal positive and negative charges) is struck in the gas mixture, using an RF (radio frequency) power source, breaking the gas molecules into ions. The ions are accelerated toward and react at the surface of the material being etched, forming another gaseous material. This is known as the chemical part of RIE. There is also a physical part, that is similar in nature to the sputtering deposition process. If the ions have sufficiently high energy, they can knock atoms out of the material to be etched without a chemical reaction. This dislodging of atoms by impact or collision constitutes the physical part of the etching. Synergy between the chemical reaction and ion bombardment leads to high etch rates. Transformer-coupled plasma RIE system.
R
Published in Philip A. Laplante, Comprehensive Dictionary of Electrical Engineering, 2018
reactive near field RCPC code See rate-compatible punctured convolutional code. RCS RCT RDSL See radar cross section. See reverse-conducting thyristor. See rate-adaptive digital subscriber line. reactance modulator modulator normally using phase or frequency modulation where the reactance of the circuit is dependent on changes in the input modulating voltage. reaction a functional in electromagnetics that relates a set of fields and sources to one another. Reaction concepts are often used in the discussion of field reciprocity. reaction range sum of end-to-end round-trip delay and processing time. reactive compensation process of counteracting the reactive component of a device by means of capacitors and inductors. Both series and shunt compensation are prevalent. reactive congestion control in packet networks, a congestion control system whose actions are based on actual congestion occurrence. reactive ion etching the process of etching materials by the use of chemically reactive ions or atoms. Typically, the reactive ions or atoms are generated in a RF plasma environment or in a microwave discharge. reactive load inductive. a load that is purely capacitive or
Process Simulation
Published in Louis Scheffer, Luciano Lavagno, Grant Martin, EDA for IC Implementation, Circuit Design, and Process Technology, 2018
Reactive ion etching involves creation of a plasma of reactants and biasing of a sample in a way that ions from the plasma are incident on the sample surface. A reaction occurs at the wafer surface and the waste products are pumped away. Since the incident ions are driven by a mostly vertical electric field, the etch rate is mostly vertical and a vertical directional etching results. Material selectivity is enhanced by the use of reactive ions, which preferentially react with one material over another. The make-up of the plasma can contain reactive species and inert species. Reactive species give higher etch rates and better selectivity but tend to produce isotropic profiles, whereas inert species have lower etch-rate selectivity and produce more directional profiles. It is also possible to combine inert with reactive species to obtain a compromise.
Impact of laser surface texturing (LST) on the tribological characteristics of piston rings and cylinder liners – a review. Part 1: development of LST technology
Published in Transactions of the IMF, 2021
R. N. Bathe, G. Padmanabham, S. Thirumalini, R. Vaira Vignesh
In the vibrorolling method, uniform identical asperities are produced by fine-scale plastic deformation of the metallic surface.31 The process stresses the machine components, as the vibrorolling process requires large working pressure between 360 and 900 MPa. In some cases, the working pressure has a detrimental effect on the dimensional aspects of the asperities and hence, it is not a reliable process. In the abrasive machining process, researchers utilised a swarm of small abrasive particles to produce undulations on the surface of the components.32 The serious limitation of the process is the non-uniformity of the undulations. Then, work has been carried out on chemical process-based technologies such as etching and lithography to produce textures on the surface.33 Reactive ion etching uses chemically reactive high-energy plasma to produce textures on the material surface. The anisotropic etching process uses chemical etchants to produce the profiles (textures) on the material surface. The etchants are material-specific and influence the material to etch rate. The limitations associated with the above technologies demanded a new reliable processor technology to texture the material surface with precise dimensional control.
Substrate-morphology driven tunable nanoscale artificial synapse
Published in Journal of Asian Ceramic Societies, 2021
Shahid Iqbal, Mohit Kumar, Ranveer Singh, Qadeer Akbar Sial, Hyungtak Seo
The RIE is a plasma process for etching materials by radio frequency (RF) gas discharges (ions, radicals) in a low-pressure chamber. It is a collaborative process between energetic ion bombardment and chemically active species. On the other hand, several conditions were applied in an attempt to engineer nanostructures of the surface of substrate at required nanoscale level. After all, the working pressure was kept at 150 mTorr with 50 W of power. SF6 gas pressure was kept fixed at 20 sccm for 30 and 60 s, separately.