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Nanoionic Switches as Post-CMOS Devices for Neuromorphic Electronics
Published in Krzysztof Iniewski, Tomasz Brozek, Krzysztof Iniewski, Micro- and Nanoelectronics, 2017
Present-day Von Neumann computers perform sequential logical processing and memory operations using ON/OFF bistable devices. Among these, silicon-based semiconductor devices, such as complementary metal–oxide–semiconductor (CMOS) transistors and flash memories, are the most important electronic devices in information technology. Computers based on state-of-the-art CMOS architecture are extremely useful, but their performance is plagued by speed limitations because of the Von Neumann bottleneck, in which the transfer of signals between logic circuits and memory cells limits the operating speed. In addition, as the sizes of device structures are about to reach the nanometer scale, the physical and technological limitations of CMOS technologies present significant challenges to further development of the information society. This situation has necessitated the development of computers based on new concepts with unique and novel functions that can be integrated into the CMOS platform, which corresponds to more-than-Moore or the use of completely different operational principles beyond the capabilities of current CMOS technology, that is, beyond CMOS.
Design of CNTFET-based Ternary Ring and Up–Down Counter Cells
Published in IETE Journal of Research, 2023
Trapti Sharma, Anil Kumar Sahu, Himanshu Shekhar, Hemlata Shakya
The designing of future nano-electronic systems involves the combination of “More than Moore”, “More Moore”, and “Beyond CMOS” options to achieve enhanced performance. Thereby the “Beyond CMOS” option covers new materials for transistors and interconnects such as carbon nanotubes or some other organic or inorganic materials and “More than Moore” implements non-digital functionalities using ferroelectric, acoustic, mechanics, or optics. Therefore, in this article to reap these benefits, carbon nanotube field-effect transistors (CNTFETs) are used for the realization of digital circuits [6]. In ternary logic, the operation is carried out on three significant logic levels. Ternary circuit realization requires multi-threshold voltage operating devices compared to conventional CMOS devices which, in turn, involves a complex mechanism in realizing multiple threshold voltages. As in CNTFETs, the alteration in threshold voltage could be easily achieved by adjusting the CNT diameter values or chirality vector; therefore, they offer the viable option to realize various ternary logic circuits [7].
Performance optimization of energy harvesting solutions for 0.18um CMOS circuits in embedded electronics design
Published in Cogent Engineering, 2020
Significant opportunities can be divided into continued scaling of conventional transistor devices (termed More Moore) and adding new device concepts for computation (termed beyond Moore or beyond CMOS) or new functionality onto the base CMOS technology (termed More than Moore). The key concept in More Moore is the circuit architectures will be similar to present CMOS architectures and only the devices, voltages, or currents are changed. More Moore is looking at the challenges of scaling CMOS devices to dimensions below 10 nm (Guo & Lee, 2009).