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Securing Medical Data Using Fully Homomorphic Encryption
Published in Durgesh Kumar Mishra, Nilanjan Dey, Bharat Singh Deora, Amit Joshi, ICT for Competitive Strategies, 2020
Anita Chaudhari, Rajesh Bansode
In Fully homomorphic encryption scheme, you can perform any type of mathematical operation on cipher text. Craig Gentry was the initial to propose that they could be hypothetically possible. He proposed system that allows two operation on encrypted data and it is called Homomorphic Encryption. Given system relies on ideal Lattice Based Cryptography
Determination of 3D pore network structure of freeze-dried maltodextrin
Published in Drying Technology, 2022
M. Thomik, S. Gruber, P. Foerst, E. Tsotsas, N. Vorhauer-Huget
So far, most of the PN models used in drying technology are built on ideal two-dimensional (2D) and three-dimensional (3D) lattices. The application of ideal lattice structures has several advantages. These are (i) the simple implementation of structure, (ii) the ease of visualization and analysis of the invasion process as well as (iii) the availability of invasion rules. The ideal lattices can be built based on the effective morphological data of the real porous medium and therefore predict the basic correlations between structure and the dynamic gas–liquid distribution as well as the overall structure of the invasion patterns. The order of invasion is usually based on the Young–Laplace equation, which correlates the capillary pressure with the radius of the capillaries. In most cases, ideal cylinders or rectangles are assumed in these simulations.[4,5,8]
Atomic simulation of AlGaN film deposition on AlN template
Published in Molecular Physics, 2020
Libin Zhang, Ling Li, Yifan Wang, Yalun Suo, Sheng Liu, Zhiyin Gan
Figure 8 shows the atomic structure in deposited AlGaN films under different temperatures. The wurtzite structure is expected for the ideal AlGaN film. The zinc blende denotes the zinc blende inclusions. And the unidentified structure refers to the unwanted defects or polytypism. It can be seen in Figure 8(a) that there are much unidentified structures in deposited AlGaN film at 1600 K and the atoms are arranged irregularly. There are lattice distortions due to the deviation from the ideal lattice sites of some atoms. As the temperature is increased to 2000K, the distribution of unidentified structure decreases in Figure 8(b). It is further decreased when the temperature is increased to 2400 K in Figure 8(c). Meanwhile, the overall atomic arrangement is more orderly as the temperature increases. The regular pattern of the deposited atoms can be more easily observed.
Molecular dynamics simulations of AlN deposition on GaN substrate
Published in Molecular Physics, 2019
Libin Zhang, Han Yan, Kuan Sun, Sheng Liu, Zhiyin Gan
The atomic structure distribution of deposited AlN film on two GaN surfaces is shown in Figure 3. The ideal lattice structure is hexagonal diamond structure (wurtzite). The structure distribution of deposited AlN film on two GaN surfaces can be clearly observed. To quantitatively calculate the component of all types of structure in Figure 3, the structural component of deposited AlN film is shown in Figure 4. The colour classification in Figure 3 is one-to-one correspondence with the numeric classification of abscissa in Figure 4. The specific correspondence is shown in Figure 4. It can be seen in Figures 3 and 4 that the component of wurtzite structure of deposited AlN increases as the temperature increases from 1250 to 1850 K on two GaN surfaces. However, the component of wurtzite structure of deposited AlN film on (0001) Ga-terminated GaN surface is much higher than that on (000-1) N-terminated GaN surface. Meanwhile, the component of zinc blende and other structure on (0001) Ga-terminated GaN surface is lower than that on (000-1) N-terminated GaN surface under all temperatures, indicating that better crystallinity of deposited AlN film is achieved on (0001) Ga-terminated GaN surface than on (000-1) N-terminated GaN surface.