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Properties of GaInP-based Materials for UHB-LED Production grown in Multiwafer Planetary Reactors
Published in Jong-Chun Woo, Yoon Soo Park, Compound Semiconductors 1995, 2020
R. Beccard, J. Knauf, G. Lengeling, D. Schmitz, H. Jürgensen
As group III precursors trimethylgallium, trimethylindium and trimethylaluminium were used. The group V precursors were undiluted AsH3 and PH3 and additionally tertiarybutyl -phosphine (TBP). Substrates were undoped and n-type GiaAs wafers (2" and 4” diameter). Typical growth parameters were: a reactor pressure of 50 mbar, deposition temperature of 700 - 750 °C and a total flow rate of 17.2 l/min.
Plenary Papers
Published in M S Shur, R A Suris, Compound Semiconductors 1996, 2020
The design of the reactors allows a wide range of growth parameters without change of its main characteristics. However, most steps of the nitride processes are run at a total pressure around 100 mbar and at a typical growth temperature of 1000–1100 °C. If necessary, parts of the structures can also be grown at any pressure between 10 and 1000 mbar. The precursors were trimethylgallium or triethylgallium, trimethylindium, trimethylaluminum and ammonia. As carrier gas hydrogen and nitrogen are used.
Growth Techniques
Published in Alan Owens, Semiconductor Radiation Detectors, 2019
The growth process involves the forced convection of the metal organic vapor species over a heated substrate. The molecules striking the surface release the desired species, which then chemically react at the surface producing growth. For Group III-V semiconductors, the chemical processes involved are quite simple, in that an alkyl compound for the Group III element and a hydride for Group V element decompose in the 500 ºC to 800 ºC temperature range to form the III-V compound semiconductor. For example, gallium arsenide could be grown in a reactor on a substrate by introducing trimethylgallium (Ga(CH3)3, often abbreviated to TMG) and arsine (AsH3), via the reaction,
Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates
Published in Philosophical Magazine, 2021
K. Pantzas, G. Beaudoin, M. Bailly, A. Martin, A. Grisard, D. Dolfi, O. Mauguin, L. Largeau, I. Sagnes, G. Patriarche
The 200 mm template was diced into 50 mm wafers using laser cutting. Annealing and growth was carried out in a Veeco D180 Turbodisk reactor. The annealing experiments were carried out at three different annealing temperatures of: 645 C, 745 C, and 845 C, for 30 min and under a phosphine flow of 300 sccm. The lowest temperature is close to the one disclosed in Reference [2], discussing the fabrication of the templates. The highest temperature is similar to one used for the obtained high quality GaP and AlGaP in Reference [12]. In addition to the annealing experiments, two samples were grown on the GaP/Si templates using MOCVD: a 200 nm GaP layer to test GaP growth, and, separately, the following structure to test AlGaP growth: a nominally 325 nm thick GaP buffer followed by two periods consisting of a 47 nm thick AlGaP layer, containing 73 at.% aluminium, and a 64 nm thick GaP layer. Additionally, the 80 nm of the GaP buffer contain five 1 nm thick AlP markers, spaced every 16 nm. Both samples were grown at a reactor temperature of 845 C and a reactor pressure of 20 Torr, using trimethylaluminum, trimethylgallium, and phopshine as precursors to elementary aluminium, gallium, and phosphorous, respectively.