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Chemistry of 2D Materials for Energy Applications
Published in Ram K. Gupta, 2D Nanomaterials, 2022
Charu Goyal, Anuj Kumar, Ram K. Gupta
Several types of 2D materials have been noted in the wake of graphene’s discovery, containing mono-elemental analogues (MEAs) of graphene, transition metal dichalcogenides (TMDs), carbides, nitrides, and carbonitrides (MXene) of transition metals. The typical architecture of popular 2D materials is shown in Figure 1.1. MEAs are 2D materials that are made up of only one kind of element with 2D structures similar to graphene. MX2, in which M is a transition metal atom (including Mo, Nb, V, or W) and X is represented as a chalcogen atom, is the chemical formula for TMDs (including S, Se, or Te). 2D transition metal dichalcogenides have a wide range of applications in high-end electronics, spin-manipulated electronics technology, optoelectronic devices, and energy storage and conversion due to their sturdy spin–orbit coupling and favorable electrical as well as mechanical characteristics [3]. MXenes are typically made by carefully removing the ‘A’ components from MAX phases, which have the chemical stoichiometry of Mn+1AXn (where M is an earlier transition metal, A is a group 12–16 element, and X is carbon or nitrogen). Large electrical conductivity, appropriate hydrophilic behavior, good thermal stability, broad interlayer spacing, with readily adjustable structure have all been discovered in MXenes [4], which makes it a potential material for electrochemical energy storage.
Ion-Exchange Nanocomposites: Avant garde Materials for Electrodialysis
Published in Kaushik Pal, Hybrid Nanocomposites, 2019
Shaswat Barua, Swagata Baruah, Rocktotpal Konwarh
Successful application of membranes of electrodialysis is intertwined with the challenges of developing efficient, cost-effective materials and technological strategies to obtain the desired qualities. In this context, novel biocompatible polymers may be designed with multifunctional moieties. Tailoring the structure of the polymers is expected to confer the requisite attributes such as mechanical toughness, biocompatibility, and electrical property. Furthermore, this may be projected as an avenue to establish an optimum balance between permeability and selectivity [76, 77]. Such polymers will also provide a compatible multifunctional surface for nanomaterial impregnation. Depending on the target application, the available choices for nanomaterials are generally diverse. Recently, transition metal dichalcogenides (TMDs) have attracted significant attention because of their unique electronic and optical properties. Researchers have shown the potential of TMDs in biosensors, solar cells, and supercapacitors. It is of relevance to note that Azamat and Khataee have reported the potential of a MoS2 membrane in heavy metal separation from water [78]. Thus, there is an immense possibility of utilizing TMDs (MoS2, WS2, etc.) in the fabrication of polymer-based ion-exchange membranes in the near future.
CVD Synthesis of Graphene and Advanced 2D Materials
Published in Craig E. Banks, Dale A. C. Brownson, 2D MATERIALS, 2018
Transition metal dichalcogenides are a large family of material the have a wide range of behaviours from superconducting and metallic, to semiconducting and insulating.78 CVD processes for the manufacture of TMDC were first developed for molybdenum disulphide (MoS2) and tungsten disulphide (WS2), using MOCVD.79 The decomposition of hexacarbonyl specie containing Mo or W, combined with vapourised sulphur, allowed for the growth of films on quartz, mica and LiF substrates. However, the produced films were thick (> 100 nm) and of polycrystalline nature, diluting the exotic properties required for next generation technologies. Producing large-area, 2D crystal TMDCs with enhanced fundamental properties are required to push the bounds of electronic devices, optics and ultimately technology.80
Generation of four-wave mixing in molybdenum ditelluride (MoTe2)-deposited side-polished fibre
Published in Journal of Modern Optics, 2021
H. Ahmad, M. K. A. Zaini, A. A. Kamely, M. Z. Samion, M. F. Ismail, K. S. Lim, A. K. Zamzuri, K. Thambiratnam
Of the various 2D materials reported, transition metal dichalcogenides (TMDs) were amongst the new classes of 2D materials that have attracted significant interest due to their excellent physical and chemical properties, as well as having a unique dimensionality effect [16–18]. As a member of the TMD family, molybdenum ditelluride (MoTe2) has received considerable attention due to its cost-effectiveness, high chemical stability, tailorable bandgap, and high conductivity [19]. The structure of MoTe2 consists of two layers of chalcogen atoms and a hexagonal layer of transition metal [20]. Unlike graphene, which has a zero bandgap, the properties of TMDs rely on their number of layers [21]. For instance, a bulk MoS2 is an indirect semiconductor whereas its monolayer form is a direct semiconductor, each having bandgaps of 1.2 and 1.9 eV respectively [22]. When the electronic properties of TMDs are altered, for instance by replacing the sulfur (S) atom with a tellurite (Te) atom, the bandgap of TMDs decreases. These made MoTe2 a more desirable material for certain opto-electronics applications compared to the other TMD materials due to its smaller bandgap [23–25]. The potential of MoTe2 in nonlinear optical systems, however, is still at an early stage, and it is of interest to investigate the nonlinear effect in MoTe2-based devices.
Improvement of the stability and optoelectronic characteristics of molybdenum disulfide thin-film transistors by applying a nitrocellulose passivation layer
Published in Journal of Information Display, 2020
Byung Ha Kang, Su Jin Jung, Seonghwan Hong, I. Sak Lee, Seongin Hong, Sunkook Kim, Hyun Jae Kim
Transition metal dichalcogenides (TMDs) have received considerable attention as one of the most promising semiconductor materials for the fundamental driving or sensing unit device of the next-generation nanoelectronics. Among the various TMDs, molybdenum disulfide (MoS2) is one of the most investigated until now due to its outstanding characteristics, such as its high field effect mobility, high current on/off ratio, desirable bandgap (1.2–1.9 eV), and possibility of visible-light detection [1–3]. Therefore, MoS2 is evaluated to be a potential material applied to various applications like the backplane of active-matrix displays, integrated circuits, solar cells, photosensors, and optoelectronic devices [4–6].
Charge transfer enabled by the p-doping of WSe2 for 2D material-based printable electronics
Published in Journal of Information Display, 2023
Taoyu Zou, Haksoon Jung, Ao Liu, Soonhyo Kim, Youjin Reo, Taesu Choi, Yong-Young Noh
The past few decades have witnessed the rapid development of inks based on two-dimensional (2D) materials owing to their potential for diverse industrial applications, including energy harvesting and conversion, sensors, photovoltaics, and flexible electronics [1]. Among them, transition metal dichalcogenides (TMDs) are a promising and unique class of materials, and have been used as building blocks in fundamental printable (opto)electronic applications, such as thin-film transistors (TFTs), superconductors, supercapacitors, detectors, and logic circuits [2,3], due to their versatility from insulators, semiconductors, semimetals, to metals [4].